Semiconductor device with bus terminating function
The distance between a drain contact and gate electrode in a terminating transistor, which couples a termination resistor connected to an output terminal to a power source node, is set shorter than in an output transistor, which drives an output node in accordance with an internal signal. The area of the terminating circuit is reduced while the reliability against the surge is maintained. Thus, an output circuit containing the terminating circuit that occupies a small area and is capable of transmitting a signal/data at high speed is provided.
1 - 6 . (canceled)
7 . A semiconductor device comprising:
an output transistor having a region coupled to a first internal line;
a terminating circuit including a terminating resistance element having one end coupled to a second internal line; and
a pad coupled to said first internal line and said second internal line, wherein length of said second internal line is longer than that of said first internal line.
8 . A semiconductor device according to claim 7 , wherein each of the first internal line and the second internal line includes a wiring layer.
9 . A semiconductor device according to claim 7 , wherein a part of the second internal line includes a part of the first internal line.
10 . A semiconductor device according to claim 9 , wherein the part of the second internal line is coupled to the pad.
11 . A semiconductor device according to claim 10 , wherein each of the first internal line and the second internal line includes a wiring layer.
12 . A semiconductor device according to claim 11 , wherein the terminating circuit further includes a transistor coupled between other end of the terminating resistance element and a voltage node.
13 . A semiconductor memory device comprising:
a pad;
a memory circuit;
an output circuit including an output transistor having a region coupled to a first internal line, and driving said pad in accordance with an output signal from said memory circuit; and
a terminating circuit including a terminating resistance element having one end coupled to said pad via a second internal line which has longer length than that of the first internal line.
14 . A semiconductor memory device according to claim 13 , wherein each of the first internal line and the second internal line includes a wiring layer.
15 . A semiconductor memory device according to claim 13 , wherein a part of the second internal line includes a part of the first internal line.
16 . A semiconductor memory device according to claim 15 , wherein each of the first internal line and the second internal line includes a wiring layer.
17 . A semiconductor memory device according to claim 16 , wherein the terminating circuit further includes a transistor coupled between other end of the terminating resistance element and a voltage node.
18 . A semiconductor device comprising:
a pad;
an output transistor of a first conductivity type connected to between an output node and a first power supply voltage, and driving said pad via said output node in accordance with an internal signal;
a terminating circuit including a terminating resistance element having one end connected to a terminating node, and a terminating transistor of the first conductivity type connected between another end of said terminating resistance element and said first power supply voltage; and
a first interconnection line interconnecting said output node and said terminating node and said pad, and having an interconnection length between said pad and said output node shorter than an interconnection length between said pad and said terminating node.
19 . The semiconductor device according to claim 18 , wherein said first conductivity type is a P channel type.
20 . The semiconductor device according to claim 18 , wherein said terminating transistor of the first conductivity type is shorter in distance between a gate and a drain contact than said output transistor of the first conductivity type.
21 . A semiconductor device comprising:
a pad;
an output transistor of a first conductivity type connected between an output node and a first power supply voltage, driving said pad via said output node in accordance with an internal signal;
a terminating circuit including a terminating resistance element having one end connected to a terminating node, and a terminating transistor of a second conductivity type connected between another end of said terminating resistance element and a second power supply voltage; and
a first interconnection line for interconnecting said pad and output node and said terminating node, and having an interconnection length between said pad and said output node being shorter than an interconnection length between said pad and said terminating node.
22 . The semiconductor device according to claim 21 , wherein said first conductivity type is an N channel type, and said second conductivity type is a P channel type.
23 . The semiconductor device according to claim 21 , wherein said terminating transistor of the second conductivity type is shorter in a distance between a gate and a drain contact than said output transistor of the first conductivity type.