Liquid crystal display device

1. A liquid crystal display device comprising:

a substrate;

a plurality of gate lines formed over the substrate and extending in a first direction;

a first insulating film formed over said plurality of gate lines,

a plurality of data lines formed over the first insulating film and extending in a second direction intersecting said first direction, each of said plurality of data lines being formed of a first electrically conductive film and having a data line terminal adapted to be coupled to an external circuit;

a plurality of thin film transistors, each of said plurality of thin film transistors having a semiconductor layer comprising an i-type semiconductor and an impurity-doped semiconductor, laminated over the first insulating film, a first electrode formed over said semiconductor layer, and a second electrode formed by a portion of a corresponding one of said plurality of data lines;

a second insulating film formed over said plurality of data lines, said first electrodes of said plurality of thin film transistors and said data line terminals, provided with first openings over said first electrodes of said plurality of thin film transistors, and provided with second openings over said data terminals;

a plurality of pixel electrodes formed over said second insulating film, each of said plurality of pixel electrodes comprising a second electrically conductive film and being coupled to said first electrode of a corresponding one of said plurality of thin film transistors via a corresponding one of said first openings; and

electrically conductive layers comprising said second electrically conductive films separate from said plurality of pixel electrodes, and formed over said data line terminals, each of said electrically conductive layers being coupled to a corresponding one of said plurality of data lines via a corresponding one of said second openings,

wherein said second electrically conductive films are transparent electrically conductive films comprised of an oxide, and

wherein, in a cross section of an end portion of said first electrode in a direction of a length of a channel of said plurality of thin film transistors, said impurity-doped semiconductor is configured to extend a distance of 0.2 μm or more beyond said first electrode in said direction of a length of a channel of said plurality of thin film transistors, and said i-type semiconductor is configured to extend beyond said impurity-doped semiconductor in said direction of a length of a channel of said plurality of thin film transistors.

2. A liquid crystal display device according to claim 1 , wherein said transparent electrically conductive films are indium tin oxides and overlap end portions of the first electrodes.

3. A liquid crystal display device according to claim 2 , wherein said i-type semiconductor and said impurity-doped semiconductor are in contact with each other in the neighborhood of a channel region of said thin film transistors.

4. A liquid crystal display device according to claim 2 , wherein, in said cross section of said end portion of said first electrode in said direction of a length of a channel of said plurality of thin film transistors, said impurity-doped semiconductor is configured to extend a distance in a range of 0.2 μm to 0.7 μm beyond said first electrode in said direction of a length of a channel of said plurality of thin film transistors.

5. A liquid crystal display device comprising:

a substrate;

a gate line formed over the substrate;

a first insulating film formed over said substrate and said gate line;

a thin film transistor formed over said first insulating film, having a semiconductor layer comprising an i-type semiconductor and an impurity-doped semiconductor, a first electrode, and a second electrode formed by a portion of a data line;

a second insulating film formed over said data line and said thin film transistor;

a pixel electrode formed over said second insulating film and coupled to said first electrode via a first opening formed in said second insulating film; and

a drain terminal formed over said second insulating film and coupled to said data line via a second opening formed in said second insulating film,

wherein said pixel electrode and said drain terminal are transparent electrically conductive films comprised of an oxide,

wherein said semiconductor layer is formed along said data line,

wherein, in a cross section of said data line in a region where said data line is coupled to said drain terminal, said impurity-doped semiconductor is configured to be extend longer than said data line in a direction toward an adjacent edge of said substrate, and said i-type semiconductor is configured to be wider than said impurity-doped semiconductor in said direction toward said adjacent edge of said substrate, and

wherein, in a cross section of an end portion of said first electrode in a direction of a length of a channel of said thin film transistor, said impurity-doped semiconductor is configured to extend beyond said first electrode in said direction of a length of a channel of said thin film transistor, and said i-type semiconductor is configured to extend beyond said impurity-doped semiconductor in said direction of a length of a channel of said thin film transistor.

6. A liquid crystal display device according to claim 5 , wherein said i-type semiconductor and said impurity-doped semiconductor are in contact with each other in the neighborhood of a channel region of said thin film transistor.

7. A liquid crystal display device according to claim 6 , wherein, in said cross section of said end portion of said first electrode in said direction of a length of a channel of said thin film transistor, said impurity-doped semiconductor is configured to extend a distance of 0.2 μm or more beyond said first electrode in said direction of a length of a channel of said thin film transistor.

8. A liquid crystal display device according to claim 7 , wherein, in said cross section of said end portion of said first electrode in said direction of a length of a channel of said thin film transistor, said impurity-doped semiconductor is configured to extend a distance in a range of 0.2 μm to 0.7 μm beyond said first electrode in said direction of a length of a channel of said thin film transistor.