Display device
View Patent ↗A display device includes a substrate, a gate line formed over the substrate, a first insulating film formed over the substrate and the gate line, a semiconductor film formed over the first insulating film, a drain electrode formed over the semiconductor film, a source electrode formed over the semiconductor film, a data line connected to the drain electrode and formed over the first insulating film, a second insulating film formed over the source electrode and the data line, a pixel electrode electrically connected to the source electrode and formed over the second insulating film, and a transparent conductive film connected to the data line through a contact hole formed in the second insulating film. The transparent conductive film includes a first portion which none of the first insulating film and the second insulating film underlie.
1. A display device comprising:
a substrate;
a first gate line and a second gate line adjacent to said first gate line formed over said substrate;
a first insulating film formed over said first and second gate lines;
a first data line formed of a first electrically conductive film formed over said first insulating film and having a terminal adapted to be coupled to an external circuit;
at least one thin film transistor having a semiconductor layer comprising an i-type semiconductor and an impurity-doped semiconductor laminated over said first insulating film, a first electrode formed over said semiconductor layer, and a second electrode formed by a portion of said first data line, said thin film transistor being supplied with a scanning signal via said first gate line;
a second insulating film formed over said first data line, said first electrode of said thin film transistor and said terminal of said data line, provided with a first opening over said first electrode of said thin film transistor, and provided with a second opening over said terminal of said first data line;
a pixel electrode comprised of a second electrically conductive film, formed over said second insulating film and coupled to said first electrode via said first opening; and
an electrically conductive layer comprising said second electrically conductive film separate from said pixel electrode, formed over said terminal of said first data line, and coupled to said first data line via said second opening,
wherein said second electrically conductive film is a transparent electrically conductive film comprised of an oxide,
wherein, in a cross section of an end portion of said first electrode in a direction of a length of a channel of said thin film transistor, said impurity-doped semiconductor is configured to extend beyond said first electrode in said direction of a length, of a channel of said thin film transistor, and said i-type semiconductor is configured to extend beyond said impurity-doped semiconductor in said direction of a length of a channel of said thin film transistor, and
wherein said pixel electrode overlies said first gate electrode with said first insulating film between said pixel electrode and said first gate electrode.
2. A display device according to claim 1 ,
wherein said semiconductor layer extends along said first data line to said terminal of said first data line, and
wherein, in a cross section of said terminal of said first data line in a direction of extension of said first data line, said impurity-doped semiconductor is configured to be wider than said first data line in a direction toward an adjacent edge of said substrate, and said i-type semiconductor is configured to be wider than said impurity-doped semiconductor in said direction toward said adjacent edge of said substrate.
3. A display device according to claim 1 , wherein said pixel electrode overlies said first gate line with said first and second insulating films between said pixel electrode and said first gate line.
4. A display device according to claim 3 ,
wherein said semiconductor layer extends along said first data line to said terminal of said first data line, and
wherein, in a cross section of said terminal of said first data line in a direction of extension of said first data line, said impurity-doped semiconductor is configured to be wider than said first data line in a direction toward an adjacent edge of said substrate, and said i-type semiconductor is configured to be wider than said impurity-doped semiconductor in said direction toward said adjacent edge of said substrate.
5. A display device according to claim 1 , wherein said pixel electrode overlies said first and second gate lines with said first insulating film between said pixel electrode and said first and second gate lines.
6. A display device according to claim 5 ,
wherein said semiconductor layer extends along said first data line to said terminal of said first data line, and
wherein, in a cross section of said terminal of said first data line in a direction of extension of said first data line said impurity-doped semiconductor is configured to be wider than said first data line in a direction toward an adjacent edge of said substrate, and said i-type semiconductor is configured to be wider than said impurity-doped semiconductor in said direction toward said adjacent edge of said substrate.
7. A display device according to claim 5 , wherein said pixel electrode overlies said first gate line with said first and second insulating films between said pixel electrode and said first gate line.
8. A display device according to claim 7 ,
wherein said semiconductor layer extends along said first data line to said terminal of said first data line, and
wherein, in a cross section of said terminal of said first data line in a direction of extension of said first data line, said impurity-doped semiconductor is configured to be wider than said first data line in a direction toward an adjacent edge of said substrate, and said i-type semiconductor is configured to be wider than said impurity-doped semiconductor in said direction toward said adjacent edge of said substrate.
9. A display device comprising:
a substrate;
a first gate line and a second gate line adjacent to said first gate line formed over said substrate;
a first insulating film formed over said first and second lines;
a first data line formed of a first electrically conductive film formed over said first insulating film and having a terminal adapted to be coupled to an external circuit;
at least one thin film transistor having a semiconductor layer comprising, an i-type semiconductor and an impurity-doped semiconductor laminated over said first insulating film, a first electrode formed over said semiconductor layer, and a second electrode formed by a portion of said first data line, said thin film transistor being supplied with a scanning signal via said first gate line;
a second insulating film formed over said first data line, said first electrode of said thin film transistor and said terminal of said data line, provided with a first opening over said first electrode of said thin film transistor, and provided with a second opening over said terminal of said first data line;
a pixel electrode comprised of a second electrically conductive film, formed over said second insulating film and coupled to said first electrode via said first opening; and
an electrically conductive layer comprising said second electrically conductive film separate from said pixel electrode, formed over said terminal of said first data line, and coupled to said first data line via said second opening,
wherein said second electrically conductive film is a transparent electrically conductive film comprised of an oxide,
wherein, in a channel region of said semiconductor layer of said thin film transistor where said first and second electrodes are disposed to oppose each other, said impurity-doped semiconductor extends beyond said first and second electrodes in a direction of extension of a length of said channel of said semiconductor layer and said i-type semiconductor extends beyond said impurity-doped semiconductor in said direction of extension of a length of said channel,
wherein said impurity-doped semiconductor extends beyond an end of a portion of said first electrode overlying said pixel electrode on a side of said first electrode opposite from said channel region in said direction of extension of a length of said channel,
wherein said i-type semiconductor extends beyond said impurity-doped semiconductor in said direction of extension of a length of said channel, and
wherein said pixel electrode overlies said first gate line with said first insulating film between said pixel electrode and said first gate line.
10. A display device according to claim 9 ,
wherein said semiconductor layer extends along said first data line to said terminal of said first data line, and
wherein, in a cross section of said terminal of said first data line in a direction of extension of said first data line, said impurity-doped semiconductor is configured to be wider than said first data line in a direction toward an adjacent edge of said substrate, and said i-type semiconductor is configured to be wider than said impurity-doped semiconductor in said direction toward said adjacent edge of said substrate.
11. A display device according to claim 9 , wherein said pixel electrode overlies said first gate line with said first and second insulating films between said pixel electrode and said first gate line.
12. A display device according to claim 11 ,
wherein said semiconductor layer extends along said first data line to said terminal of said first data line, and
wherein, in a cross section of said terminal of said first data line in a direction of extension of said first data line, said impurity-doped semiconductor is configured to be wider than said first data line in a direction toward an adjacent edge of said substrate, and said i-type semiconductor is configured to be wider than said impurity-doped semiconductor in said direction toward said adjacent edge of said substrate.
13. A display device according to claim 9 , wherein said pixel electrode overlies said first and second gate lines with said first insulating film between said pixel electrode and said first and second gate lines.
14. A display device according to claim 13 ,
wherein said semiconductor layer extends along said first data line to said terminal of said first data line, and
wherein, in a cross section of said terminal of said first data line in a direction of extension of said first data line, said impurity-doped semiconductor is configured to be wider than said first data line in a direction toward an adjacent edge of said substrate, and said i-type semiconductor is configured to be wider than said impurity-doped semiconductor in said direction toward said adjacent edge of said substrate.
15. A display device according to claim 13 , wherein said pixel electrode overlies said first gate line with said first and second insulating films between said pixel electrode and said first gate line.
16. A display device according to claim 15 ,
wherein said semiconductor layer extends along said first data line to said terminal of said first data line, and
wherein, in a cross section of said terminal of said first data line in a direction of extension of said first data line, said impurity-doped semiconductor is configured to be wider than said first data line in a direction toward an adjacent edge of said substrate, and said i-type semiconductor is configured to be wider than said impurity-doped semiconductor in said direction toward said adjacent edge of said substrate.