Method of manufacturing a semiconductor integrated circuit device having a columnar laminate
View Patent ↗For improving the filling properties between vertical MISFETs constituting a SRAM memory cell, the vertical MISFETs are formed over horizontal drive MISFETs and transfer MISFETs, and they are disposed with a narrow pitch in the Y direction and a wide pitch in the X direction. After a first insulating film (O 3 -TEOS) having good coverage is disposed over a columnar laminates having a lower semiconductor layer, an intermediate semiconductor layer, an upper semiconductor layer and a silicon nitride film and a gate electrode formed over the side walls of the laminates via a gate insulating film to completely fill a narrow pitch space, a second insulating film (HDP silicon oxide film) is deposited over the first insulating film, resulting in an improvement in the filling properties, even in a narrow pitch portion, between vertical MISFETs having a high aspect ratio.
1. A semiconductor integrated circuit device comprising a plurality of vertical MISFETs including:
(a1) a columnar laminate having, at the upper portion and lower portion thereof, first and second semiconductor regions, respectively; and
(a2) a conductive film formed over side walls of the columnar laminate via a first insulating film,
wherein the plurality of vertical MISFETs having the columnar laminate and the conductive film are
(b1) spaced by a first distance in a first direction, and
(b2) spaced by a second distance, which is greater than the first distance, in a second direction, and
(c) wherein a plane pattern of the columnar laminate and the conductive film over the side walls thereof is approximately elliptical and a first diameter in the first direction is smaller than a second diameter in the second direction.
2. A semiconductor integrated circuit device according to claim 1 , wherein the columnar laminate constitutes the vertical MISFET of SRAM, and a single memory cell formation region of the SRAM is approximately rectangular and has a long side in the direction of a longer diameter of the approximately elliptical shape.