Mask device, method of fabricating the same, and method of fabricating organic light emitting display device using the same

1. A mask device comprising:

at least one mask alignment mark on a mask;

a blocking region on the mask for blocking deposited material; and

an aperture region on the mask through which the deposited material passes,

wherein the at least one mask alignment mark is outside the aperture region, the aperture region has a stripe pattern, the mask has a thickness of 0.5-1 mm, and a roll direction of a substrate on which the mask is formed is substantially parallel to a longitudinal direction of the stripe pattern to form the aperture region to have individual stripes in the stripe pattern each with a degree of straightness of 6 μm or less relative to a straight line; and

wherein the roll direction of the substrate on which the mask is formed and the longitudinal direction of the stripe pattern are also substantially parallel to a longitudinal direction of at least one scribe line for dividing the mask.

2. The mask device according to claim 1 , wherein the mask is formed of a metal or a metal alloy.

3. The mask device according to claim 2 , wherein the mask is formed of stainless steel.

4. A method of fabricating a mask device, comprising:

rolling a mask substrate;

forming an aperture region having a stripe pattern on the mask substrate, wherein a longitudinal direction of the stripe pattern is substantially parallel to a roll direction of the mask substrate, such that the formed aperture region has individual stripes in the stripe pattern each with a degree of straightness of 6 μm or less relative to a straight line;

forming at least one scribe line having a longitudinal direction substantially parallel to the roll direction of the mask substrate and the longitudinal direction of the stripe pattern for dividing the mask substrate; and

forming at least one mask alignment mark on the mask substrate,

wherein the mask substrate is formed to a thickness of 0.5-1 mm.

5. The method according to claim 4 , wherein the mask substrate is formed by a roll process using a roller.

6. The method according to claim 4 , wherein the aperture region is formed by a photolithography method.

7. The method according to claim 4 , further comprising performing a pre-treatment process after rolling the mask substrate.

8. The method according to claim 4 , wherein forming the aperture region further comprises:

applying a photoresist over an entire surface of the mask substrate;

positioning a mask over the mask substrate;

exposing an open area corresponding to a combination of the mask and mask substrate with ultraviolet light;

dissolving portions of the photoresist exposed to the ultraviolet light;

etching portions of the mask substrate corresponding to the dissolved portions of the photoresist; and

removing remaining portions of the photoresist with a strip solution.

9. The method according to claim 8 , wherein the mask causes respective regions of the mask substrate to be fully exposed, to be unexposed, and to be semi-exposed, and wherein the semi-exposed region of the mask substrate is only partially etched.

10. The method according to claim 4 , wherein forming the aperture region further comprises:

applying a photoresist over an entire surface of the mask substrate;

positioning a mask over the mask substrate;

exposing an open area corresponding to a combination of the mask and mask substrate with ultraviolet light;

dissolving portions of the photoresist unexposed to the ultraviolet light;

etching portions of the mask substrate corresponding to the dissolved portions of the photoresist; and

removing remaining portions of the photoresist with a strip solution.

11. The method according to claim 4 , further comprising:

dividing the mask device along the at least one scribe line.