Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
A pyrolytic boron-nitride material is disclosed having an in-plane thermal conductivity of no more than about 30 W/m-K and a through-plane thermal conductivity of no more than about 2 W/m-K. The density is less than 1.85 g/cc.
1 . A pyrolytic boron nitride material having an in-plane thermal conductivity of no more than about 30 W/m-K and a through-plane thermal conductivity of no more than about 2 W/m-K.
2 . The pyrolytic boron nitride material of claim 1 possessing a density of less than 1.85 g/cc.
3 . The pyrolytic boron nitride material of claim 1 wherein the in-plane conductivity is no more than about 24 W/m-K and the through-plane conductivity is no more than about 1.1 W/m-K.
4 . The pyrolytic boron nitride material of claim 1 wherein the density of said material is no more than about 1.81 g/cc.
5 . The pyrolytic boron nitride material of claim 1 wherein the in-plane conductivity is no more than about 20 W/m-K and the through-plane conductivity is no more than about 0.7 W/m-K.
6 . The pyrolytic boron nitride material of claim 1 wherein said boron nitride is characterized by an I-ratio of from about 35 to about 75.
7 . The pyrolytic boron nitride material of claim 1 , wherein said material is made by chemical vapor deposition at a temperature of less than 1,800° C.
8 . The pyrolytic boron nitride material of claim 6 , wherein the pyrolytic boron nitride is deposited on a substrate at a deposition rate of at least about 0.001 inch/hr.
9 . The pyrolytic boron nitride material of claim 6 , wherein said material is made by reaction of ammonia and a boron halide reactants in a CVD reaction zone.
10 . The pyrolytic boron nitride material of claim 7 wherein reaction zone volume and reactant flow rates are selected to provide a deposition rate of at least about 0.001 inch/hr.
11 . A vessel made from the pyrolytic boron nitride material of claim 1 .
12 . A process for making a particle from boron nitride comprising:
reacting ammonia and a boron halide in a chemical vapor deposition reaction zone under reaction conditions selected to provide a deposition rate of pyrolytic boron nitride onto a substrate of at least about 0.001 inch/hr.
13 . The process of claim 9 wherein the reaction conditions include a temperature of less than 1,800° C.
14 . The process of claim 10 wherein the flow rate of ammonia and boron halide and the reaction zone volume are selected to provide the deposition rate of at least 0.002 inch/hr.
15 . The process of claim 14 wherein the ratio of the flow rate of ammonia to the flow rate of boron halide ranges from about 2:1 to about 5:1.
16 . The process of claim 12 wherein the boron halide is boron trichloride.
17 . The process of claim 12 wherein the reaction conditions include a temperature of less than 1700° C.
18 . The process of claim 12 wherein the reaction conditions include a pressure of from about 1.0 Torr to about 0.1 Torr.
19 . The process of claim 12 wherein the reaction zone has a volume of from about 6,000 cubic inches to about 30,000 cubic inches and the ammonia is introduced into the reaction zone at a flow rate of from about 3.0 to 10.0 liters per minute, and the boron halide is introduced into the reaction zone at a flow rate of from 1.5 to 4.0 liters per minute.
20 . The process of claim 19 wherein the boron halide is boron trichloride, the reaction temperature is less than 1,800° C., and the pressure is from about 1.0 Torr to about 0.1 Torr.