Semiconductor device which includes a capacitor and an interconnection film coupled to each other and a manufacturing method thereof
View Patent ↗A semiconductor device includes a semiconductor substrate and a capacitor which is disposed on a principal surface of the semiconductor substrate. The capacitor includes a lower electrode film disposed on the principal surface of the semiconductor substrate, a dielectric film disposed on the lower electrode and an upper electrode film disposed on the dielectric film. The semiconductor device further includes an interconnection film which includes a portion disposed on the upper electrode film so as to be electrically coupled to the upper electrode film. Directions of residual stresses of the upper electrode film coincide with directions of residual stresses of the portion of the interconnection film. Each of the upper electrode film and the interconnection film may include at least one of platinum and iridium. Also, there is provided a method of manufacturing the semiconductor device.
1. A semiconductor device, comprising:
a semiconductor substrate having a principal surface;
a lower electrode film disposed on the principal surface of the semiconductor substrate;
a dielectric film disposed on the lower electrode;
an upper electrode film disposed on the dielectric film, wherein the lower electrode film, the dielectric film and the upper electrode film constitute a capacitor;
an interconnection film including a portion disposed on the upper electrode film so as to be electrically coupled to the upper electrode film, wherein directions of residual stresses of the upper electrode film coincide with directions of residual stresses of the portion of the interconnection film,
wherein the interconnection film is a first interconnection film;
a second interconnection film disposed on the first interconnection film so as to extend along the first interconnection film, wherein the second interconnection film includes titanium nitride,
wherein a ratio of a thickness of the first interconnection film to a thickness of the second interconnection film ranges from 0.5 to 5.83;
an insulating film disposed on the second interconnection film so as to cover the first and second interconnection films and the capacitor, wherein the insulating film is attached to the second interconnection film;
a third interconnection film disposed between the upper electrode film and the first interconnection film so as to extend along the first interconnection film, wherein the third interconnection film includes titanium nitride; and
an interlayer insulating film disposed between the third interconnection film and the surface of the semiconductor substrate so as to cover the capacitor with being attached to the third interconnection layer.
2. The semiconductor device according to claim 1 , wherein a ratio of a thickness of the first interconnection film to a sum of thicknesses of the second and third interconnection films ranges approximately from 0.5 to 5.83.