Interconnect structure with a mushroom-shaped oxide capping layer and method for fabricating same
View Patent ↗An interconnect structure is provided that includes a dielectric material 52 ′ having a dielectric constant of 4.0 or less and including a plurality of conductive features 56 embedded therein. The dielectric material 52 ′ has an upper surface 52 r that is located beneath an upper surface of each of the plurality of conductive features 56 . A first dielectric cap 58 is located on the upper surface of the dielectric material 52 ′ and extends onto at least a portion of the upper surface of each of the plurality of conductive features 56 . As shown, the first dielectric cap 58 forms an interface 59 with each of the plurality of conductive features 56 that is opposite to an electrical field that is generated by neighboring conductive features. The inventive structure also includes a second dielectric cap 60 located on an exposed portion of the upper surface of each of the plurality of conductive features 56 not covered with the first dielectric cap 58 . The second dielectric cap 60 further covers on an exposed surface of the first dielectric cap 58.
1. An interconnect structure comprising:
a dielectric material having a dielectric constant of 4.0 or less and comprising a plurality of conductive features embedded therein, said dielectric material having an upper surface that is located beneath an upper surface of each of said plurality of conductive features;
a first dielectric cap located on said upper surface of said dielectric material and extending onto at least a portion of said upper surface of each of said plurality of conductive features, said first dielectric cap forming an interface with each of said plurality of conductive features that is opposite to an electrical field that is generated by neighboring conductive features; and
a second dielectric cap located on an exposed portion of said upper surface of each of said plurality of conductive features not covered with said first dielectric cap, said second dielectric cap further covering on an exposed surface of said first dielectric cap.
2. The interconnect structure of claim 1 wherein said first dielectric cap is mushroom-shaped having a stem and cap, wherein said stem is located on said upper surface of said dielectric material and said cap is located on said stem and comprises a portion that extends onto said portion of each of said plurality of conductive features.
3. The interconnect structure of claim 1 wherein said first dielectric cap is an oxide.
4. The interconnect structure of claim 1 wherein each of said plurality of conductive features comprises copper and is separated from said dielectric material by a U-shaped diffusion barrier.
5. A method of fabricating an interconnect structure comprising:
forming an initial structure including at least a dielectric material having a dielectric constant of 4.0 or less and comprising a plurality of conductive features embedded therein, said dielectric material having an upper surface that is located beneath an upper surface of each of the plurality of conductive features;
selectively depositing a first dielectric cap on said upper surface of said dielectric material and extending onto at least a portion of said upper surface of each of said plurality of conductive features, said first dielectric cap forming an interface with each of said plurality of conductive features that is opposite to an electrical field that is generated by neighboring conductive features; and
forming a second dielectric cap on an exposed portion of said upper surface of each of said plurality of conductive features not covered with the first dielectric cap, said second dielectric cap further covering on an exposed surface of said first dielectric cap.
6. The method of claim 5 wherein said selective depositing comprises a selective oxidation deposition process and said first dielectric cap is mushroom-shaped having a stem and cap, wherein said stem is located on said upper surface of said dielectric material and said cap is located on said stem and comprises a portion that extends onto said portion of each of said plurality of conductive features.
7. The method of claim 6 wherein said selective oxidation deposition process comprises chemical vapor deposition performed at a temperature from about 100° to about 450° C.