Insulated gate bipolar transistor

1. An insulated gate bipolar transistor assembly comprising;

an insulated gate bipolar transistor;

a cooling channel;

a heat spreader thermally connected to said cooling channel; and

at least one bump pad electrical connector embedded in the heat spreader and connecting an emitter of said insulated gate bipolar transistor with a diode through at least one electrical connection contained within the heat spreader, wherein the heat spreader physically contacts the insulated gate bipolar transistor on a bump pad electrical connection side.

2. The assembly as recited in claim 1 , wherein said at least one bump pad electrical connector comprises;

multiple bump pad connectors contacting an emitter of the insulated gate bipolar transistor;

at least one bump pad connector contacting a diode; and

electrical connection between said multiple bump pad connections contacting said emitter and said at least one bump pad connection contacting said diode.

3. The assembly as recited in claim 1 , wherein said cooling channel comprises;

an enclosed hollow channel at least partially defined by a thermally conductive material, the enclosed hollow channel defining a fluid flow passage for a liquid at least partially contained in said enclosed hollow channel.

4. The assembly as recited in claim 3 , comprising cooling spacers between the heat spreader and the cooling channel for thermally connecting multiple insulated gate bipolar transistors to a fluid flow passing through said enclosed hollow channel.

5. The assembly as recited in claim 1 , wherein said heat spreader is capable of absorbing at least a portion of flash heat from said insulated gate bipolar transistor.

6. The assembly as recited claim 1 , comprising at least one cooling spacer defining a thermally conductive connection between said heat spreader and said cooling channel.

7. The assembly as recited in claim 6 , wherein flash heat is drawn through the heat spreader and said at least one cooling spacer into said cooling channel.

8. The device of claim 1 wherein said cooling channel abuts a layer of silicon supporting at least one insulated gate bipolar transistors.

9. The assembly as recited in claim 1 , wherein said heat spreader absorbs a portion of flash heat generated by the insulated gate bipolar transistor caused by switching between a powered state and a non-powered state.

10. The assembly as recited in claim 1 , wherein said heat spreader is a layer of polymide material.

11. The assembly as recited in claim 1 , wherein the cooling channel is in thermal contact with silicon layers on at least two sides.

12. The assembly as recited in claim 1 , wherein the at least one electrical connection is non-wire bound.

13. The assembly as recited in claim 6 , including at least one tank in fluid communication with said fluid spacers.

14. The assembly as recited in claim 8 , wherein said diode is supported on said layer of silicon.

15. An insulated gate bipolar transistor assembly comprising;

a first insulated gate bipolar transistor and a second insulated gate bipolar transistor;

first and second cooling channels each defining fluid flow passages and spaced apart to define a space therebetween;

a heat spreader thermally connected to said cooling channel and disposed at least partially between the first and second cooling channels, wherein the heat spreader is in thermal contact with each of the first insulated gate bipolar transistor and the second insulated gate bipolar transistor; and

a first bump pad electrical connector contained in the heat spreader and connecting an emitter of said first insulated gate bipolar transistor with a first diode and a second bump pad electrical connector contained in the heat spreader and connecting an emitter of said second insulated gate bipolar transistor with a second diode, wherein the first insulated gate bipolar transistor and the second insulated gate bipolar transistor are on opposing sides of the heat spreader.

16. The assembly as recited in claim 15 , wherein the heat spreader contacts the first insulated gate bipolar transistor and a second insulated gate bipolar transistor on a bump pad electrical connection side.