Ferroelectric memory device, ferroelectric memory manufacturing method, and semiconductor manufacturing method
View Patent ↗A ferroelectric memory device manufacturing method includes the steps of forming an interlayer isolating film for covering a transistor formed on a semiconductor substrate; forming a conductive plug in the interlayer insulating film to contact a diffusion region of the transistor formed on the semiconductor substrate; forming a ferroelectric capacitor including a lower electrode, a ferroelectric film and an upper electrode; and forming a compound film including silicon (Si) and a CH group on a surface of the interlayer insulating film and a surface of the conductive plug by depositing a Si compound containing Si atoms and the CH groups; wherein the compound film is formed after forming the conductive plug, and the compound film is formed before forming the lower electrode; and a self-orientation film is formed on a surface of the compound film.
1. A ferroelectric memory device manufacturing method, comprising:
forming an interlayer isolating film for covering a transistor formed over a semiconductor substrate;
forming a conductive plug in the interlayer insulating film to contact a diffusion region of the transistor formed on the semiconductor substrate;
forming a ferroelectric capacitor over the conductive plug by stacking in the order of a lower electrode, a ferroelectric film and an upper electrode; and
forming a compound film including silicon (Si) and a CH group on a surface of the interlayer insulating film and a surface of the conductive plug by depositing an Si compound containing Si atoms and the CH groups after forming the conductive plug and before forming the lower electrode; and
forming a self-orientation film on a surface of the compound film.
2. The ferroelectric memory device manufacturing method as claimed in claim 1 , wherein the Si compound comprises hexamethyldisilazane.
3. The ferroelectric memory device manufacturing method as claimed in claim 1 , wherein the self-orientation film is formed at a temperature equal to or less than approximately 300° C.
4. The ferroelectric memory device manufacturing method as claimed in claim 3 , wherein the self-orientation film is formed of a Ti film using a sputtering technique.
5. A manufacturing method of a semiconductor device including a functional film, comprising:
forming an interlayer isolating film for covering a transistor formed over a semiconductor substrate;
forming a conductive plug in the interlayer insulating film to contact a diffusion region of the transistor formed on the semiconductor substrate;
forming a functional film over the conductive plug; and
forming a compound film including silicon (Si) and a CH group on a surface of the interlayer insulating film and a surface of the conductive plug by depositing an Si compound containing Si atoms and the CH groups after forming the conductive plug and before forming the functional film; and
forming a self-orientation film over a surface of the compound film.
6. A ferroelectric memory device, comprising:
a semiconductor substrate;
a transistor formed on the semiconductor substrate, the transistor including a first diffusion region and a second diffusion region;
an interlayer insulating film formed over the semiconductor substrate for covering the transistor;
a conductive plug formed in the interlayer insulating film to contact the first diffusion region; and
a ferroelectric capacitor formed over the interlayer insulating film, the ferroelectric capacitor contacting the conductive plug;
wherein the ferroelectric capacitor is inserted between an upper electrode and a lower electrode, the lower electrode being in electrical contact with the conductive plug;
a SiOC film is formed between the conductive plug and the lower electrode; and
a self-orientation film including a self-orientation material is formed in between the SiOC film and the lower electrode.