Semiconductor integrated circuit device
View Patent ↗The present invention provides a regulator circuit that can fast-respond to a variation in load current and supply a sufficient drive current so as to be capable of generating a stable internal source voltage. The regulator circuit includes a preamplifier circuit that detects and amplifies a different between a reference voltage and an internal source voltage, a clamp circuit that limits the amplitude of an output of the preamplifier circuit, a main amplifier circuit that amplifies the amplitude-limited output of the preamplifier circuit, and a driver circuit that outputs the internal source voltage according to the output of the main amplifier. Even though the internal source voltage varies abruptly, the regulator circuit does not oscillate owing to the effect of the clamp circuit.
1. A semiconductor integrated circuit device comprising:
load circuits; and
internal voltage generators for generating internal source voltages for driving the load circuits,
wherein each of the internal voltage generators includes a reference voltage generating circuit for generating reference voltages, and regulator circuits for generating the internal source voltages with reference to the reference voltages,
wherein the regulator circuit includes a preamplifier circuit for detecting and amplifying a difference between each of the internal source voltages and each of the reference voltages, a clamp circuit for limiting the amplitude of an output of the preamplifier circuit, a main amplifier circuit for amplifying the output of the preamplifier circuit limited by the clamp circuit and generating a control signal, and a driver circuit for generating the internal source voltage in response to the control signal.
2. The semiconductor integrated circuit device according to claim 1 , wherein the clamp circuit includes a first capacitive element having one end coupled to an output terminal of the preamplifier circuit, and a rectifying element which is coupled to the other end of the first capacitive element and discharges an electric charge stored in the first capacitive element.
3. The semiconductor integrated circuit device according to claim 2 , wherein the rectifying element is coupled in such a manner that the direction thereof from the other end of the first capacitive element to a ground node becomes a forward direction.
4. The semiconductor integrated circuit device according to claim 1 ,
wherein an input stage of the main amplifier circuit is configured by MOS transistors, and
wherein the clamp circuit is formed by coupling the gates and bodies of the MOS transistors that configure the input stage of the main amplifier circuit.
5. The semiconductor integrated circuit device according to claim 4 , wherein the MOS transistors that configure the input stage of the main amplifier circuit are formed in a well electrically isolated from a base substrate.
6. The semiconductor integrated circuit device according to claim 4 , wherein the MOS transistors that configure the input stage of the main amplifier circuit are formed over an SOI substrate.
7. The semiconductor integrated circuit device according to claim 1 ,
wherein the preamplifier circuit includes a fully differential amplifier circuit which outputs a pair of signals being in phase and antiphase with the corresponding internal source voltage, and
wherein the regulator circuit further includes a second capacitive element coupled between an input terminal of the preamplifier circuit, which inputs the corresponding internal source voltage, and an output terminal of the preamplifier circuit, which outputs a signal being in phase with the internal source voltage.
8. The semiconductor integrated circuit device according to claim 1 , wherein the preamplifier circuit includes a cascode-type differential amplifier circuit.
9. The semiconductor integrated circuit device according to any claim 1 , wherein the gain of the preamplifier circuit is larger than that of the main amplifier circuit.