Semiconductor device and method for fabricating the same
View Patent ↗A semiconductor device includes: a first insulation film formed over a semiconductor substrate; and a plurality of first interconnects selectively formed in the first insulation film. A plurality of gaps are formed in part of the first insulation film located between adjacent ones of the first interconnects so that each of the gaps has a cylindrical shape extending vertically to a principal surface of the semiconductor substrate. A cap film is formed of metal or a material containing metal in upper part of each of the first interconnects.
1. A semiconductor device comprising:
a first insulation film formed over a semiconductor substrate; and
a plurality of first interconnects formed in the first insulation film,
wherein a plurality of gaps are formed in part of the first insulation film located between adjacent ones of the first interconnects so that each of the gaps has a cylindrical shape extending vertically to a principal surface of the semiconductor substrate,
the plurality of gaps are formed so that lower parts of the plurality of gaps and a bottom part of at least one of the plurality of first interconnects are substantially at the same level, and
a cap film is formed of metal or a material containing metal in upper part of each of the first interconnects.
2. The semiconductor device of claim 1 , wherein the plurality of gaps are formed as an array pattern in the first insulation film.
3. The semiconductor device of claim 1 , wherein a bottom of each of the gaps has a diameter of 2 nm or more and 50 nm or less.
4. The semiconductor device of claim 1 , further comprising:
a second insulation film formed under the first insulation film so as to be in contact with respective bottoms of the gaps.
5. The semiconductor device of claim 4 , wherein the first insulation film has a smaller permittivity than a permittivity of the second insulation film.
6. The semiconductor device of claim 1 , wherein the gaps pass through the first insulation film.
7. The semiconductor device of claim 1 , further comprising:
a second insulation film formed on the first insulation film so as to be in contact with the first interconnects; and
second interconnects formed in the second insulation film.
8. The semiconductor device of claim 1 , wherein the cap film is formed of metal of Co, Mn, W, Ta or Ru, an alloy containing at least one metal selected from the group consisting of Co, Mn, W, Ta and Ru, metal oxide of Co, Mn, W, Ta or Ru, or CuSiN, and the cap film is conductive.
9. The semiconductor device of claim 1 , wherein a lower surface of the first insulation film is substantially flush with a bottom surface of at least one of the plurality of the first interconnects.
10. The semiconductor device of claim 1 , further comprising:
a second insulation film formed on the first insulation film; and
at least one plug formed in the second insulation film,
wherein the at least one plug is electrically connected to an associated one of the first interconnects with the cap film interposed therebetween.
11. The semiconductor device of claim 1 , wherein the plurality of the first interconnects are made of copper, and the cap film is made of a copper-containing metal.
12. The semiconductor device of claim 1 , wherein the cap film is made of CuSiN.
13. The semiconductor device of claim 1 , wherein an upper surface of the cap film is substantially flush with an upper surface of the first insulation film.