Integrated circuit with electromagnetic intrachip communication and methods for use therewith
An integrated circuit includes a substrate and a first integrated circuit die having a first circuit coupled to the substrate via a first bonding wire, the first circuit having a first intra-chip interface. A second integrated circuit die has a second circuit coupled to the substrate via a second bonding wire, the second circuit having a second intra-chip interface, the second bonding wire electrically isolated from the first bonding wire. The first circuit communicates with the second circuit via the first intra-chip interface and the second intra-chip interface, and wherein the first intra-chip interface and the second intra-chip interface communicate via a first electromagnetic coupling between the first bonding wire and the second bonding wire.
1. An integrated circuit comprising:
a substrate;
a first integrated circuit die having a first circuit coupled to a first bonding pad on the substrate via a first bonding wire, the first circuit having a first intra-chip interface; and
a second integrated circuit die having a second circuit coupled to a second bonding pad on the substrate via a second bonding wire, the second circuit having a second intra-chip interface, the second bonding wire electrically isolated from the first bonding wire;
wherein the first circuit communicates with the second circuit via the first intra-chip interface and the second intra-chip interface, and wherein the first intra-chip interface and the second intra-chip interface communicate via a first electromagnetic coupling between the first bonding wire and the second bonding wire.
2. The integrated circuit of claim 1 wherein the first electromagnetic coupling includes an inductive coupling between the first bonding wire and the second bonding wire.
3. The integrated circuit of claim 1 wherein the first electromagnetic coupling includes a capacitive coupling between the first bonding wire and the second bonding wire.
4. The integrated circuit of claim 1 wherein the first electromagnetic coupling includes an RF millimeter wave coupling between the first bonding wire and the second bonding wire.
5. The integrated circuit of claim 1 wherein the first intra-chip interface and the second intra-chip interface, in a first mode of operation, communicate via an RF millimeter wave coupling between the first bonding wire and the second bonding wire; and
wherein the first intra-chip interface and the second intra-chip interface, in a second mode of operation, communicate via a capacitive coupling between the first bonding wire and the second bonding wire.
6. The integrated circuit of claim 5 wherein the first electromagnetic coupling includes an RF millimeter wave coupling between the first bonding wire and the second bonding wire and wherein the first intra-chip interface initiates a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selects one of: the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.
7. The integrated circuit of claim 1 further comprising:
an inductive coupling between the first bonding wire and the second bonding wire;
wherein the first intra-chip interface and the second intra-chip interface, in a first mode of operation, communicate via the inductive coupling between the first bonding wire and the second bonding wire.
8. The integrated circuit of claim 7 a capacitive coupling between the first bonding wire and the second bonding wire;
wherein the first intra-chip interface and the second intra-chip interface, in a second mode of operation, communicate via the capacitive coupling between the first bonding wire and the second bonding wire;
wherein the first intra-chip interface initiates a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selects one of: the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.
9. The integrated circuit of claim 1 further comprising:
an inductive coupling between the first bonding wire and the second bonding wire; and
wherein the first intra-chip interface and the second intra-chip interface, in a first mode of operation, communicate via an inductive coupling between the first bonding wire and the second bonding wire.
10. The integrated circuit of claim 9 further comprising an RF millimeter wave coupling between the first bonding wire and the second bonding wire;
wherein the first intra-chip interface and the second intra-chip interface, in a second mode of operation, communicate via an RF millimeter wave coupling between the first bonding wire and the second bonding wire;
wherein the first intra-chip interface initiates a first trial communication via the first mode of operation and a second trial communication via the second mode of operation and selects one of: the first mode of operation, and the second mode of operation, based on first results of the first trial communication and second results of the second trial communication.
11. The integrated circuit of claim 1 wherein the substrate includes a first substrate bonding pad and a second substrate bonding pad;
wherein the first circuit includes a first circuit bonding pad;
wherein the second circuit includes a second circuit bonding pad;
wherein the first bonding wire connects the first substrate bonding pad to the first circuit bonding pad; and
wherein the second bonding wire connects the second substrate bonding pad to the second circuit bonding pad.
12. The integrated circuit of claim 1 wherein the first integrated circuit die is stacked on the second integrated circuit die.
13. The integrated circuit of claim 1 wherein the first circuit is further coupled to the substrate via a third bonding wire, and wherein the first circuit includes a third intra-chip interface; and
wherein the second circuit is further coupled to the substrate via a fourth bonding wire, and wherein the second circuit includes a fourth intra-chip interface, the fourth bonding wire electrically isolated from the third bonding wire;
wherein the first circuit further communicates with the second circuit via the third intra-chip interface and the fourth intra-chip interface, and wherein the first intra-chip interface and the second intra-chip interface communicate via a second electromagnetic coupling between the third bonding wire and the fourth bonding wire.
14. The integrated circuit of claim 13 wherein the first electromagnetic coupling is via one of: an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling;
wherein the second electromagnetic coupling is via one of: an inductive coupling, a capacitive coupling, and a millimeter wave RF coupling; and
wherein the first electromagnetic coupling differs from the second electromagnetic coupling.