IP Library Granted Patent US 8,186,028
Granted Patent B2
US 8,186,028 · App. 12/344,829 · Granted May 29, 2012

Method of manufacturing a piezoelectric resonator having improved temperature compensation

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Quick Facts
Patent No.
US 8,186,028
App. No.
12/344,829
Granted
May 29, 2012
Kind
B2
Abstract

A method for manufacturing a piezoelectric resonator, comprising the step of: producing an arrangement comprising a piezoelectric layer having a resonance frequency temperature coefficient of a first sign, a first and a second electrode. The piezoelectric layer is arranged between the first and second electrodes, and a compensation layer is arranged between the first electrode and the piezoelectric layer. The compensation layer has a compensation material having a second resonance frequency temperature coefficient of a second sign opposite to the first one. The producing comprises providing the compensation material with a modification material to increase a conductivity of the compensation layer in a direction between the first electrode and the piezoelectric layer.

Claims (7)

1. A method for manufacturing a piezoelectric resonator, the method comprising:

producing an arrangement comprising a piezoelectric layer having a resonance frequency temperature coefficient of a first sign, a first and a second electrode, the piezoelectric layer being arranged between the first and second electrodes, and a compensation layer arranged between the first electrode and the piezoelectric layer, the compensation layer having a compensation material having a second resonance frequency temperature coefficient of a second sign opposite to the first sign, wherein the producing comprises:

providing the compensation material with a modification material to increase an electrical conductivity of the compensation layer in a direction between the first electrode and the piezoelectric layer.

2. The method according to claim 1 , wherein the producing the arrangement comprises depositing the compensation layer on a conducting layer having a rough surface.

3. The method according to claim 2 , wherein producing the arrangement comprises eroding the compensation layer after the step of depositing the compensation layer on the conducting layer.

4. The method according to claim 3 , wherein the eroding the compensation layer is performed such that the compensation layer comprises a surface having a first area region facing away from the conducting layer, which has resulted from an eroded elevation in the rough surface of the conducting layer, and comprises a second area region which has resulted from the eroded compensation layer.

5. The method according to claim 2 , wherein the producing the arrangement further comprises depositing a cover layer onto a surface of the compensation layer facing away from the conducting layer having a rough surface.

Assignments (1)
MERGER Recorded May 7, 2013
From: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 030369/0703 →