IP Library Granted Patent US 7,900,521
Granted Patent B2
US 7,900,521 · App. 12/368,402 · Granted Mar 8, 2011

Exposed pad backside pressure sensor package

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,900,521
App. No.
12/368,402
Granted
Mar 8, 2011
Kind
B2
Abstract

A method and apparatus are described for fabricating an exposed backside pressure sensor ( 30 ) which protects interior electrical components ( 37 ) formed on a topside surface of a pressure sensor transducer die ( 31 ) from corrosive particles using a protective gel layer ( 38 ) and molding compound ( 39 ), but which vents a piezoresistive transducer sensor diaphragm ( 33 ) formed on a backside of the pressure sensor transducer die ( 31 ) through a vent hole ( 42 ) formed in an exposed die flag ( 36 ), enabling the sensor diaphragm ( 33 ) to directly sense pressure variations without the influence of a protective gel.

Claims (37)

1. A packaged pressure sensor, comprising:

an exposed die flag in which a vent hole is formed;

a pressure sensor transducer die comprising a sensor diaphragm formed on a backside of the pressure sensor transducer die and sensor circuitry formed on a topside of the pressure sensor transducer die, where the backside of the pressure sensor transducer is affixed to the exposed die flag so that the sensor diaphragm is directly vented to the environment through the vent hole in the exposed die flag;

one or more electrical connectors that are electrically coupled to the sensor circuitry formed on the topside of the pressure sensor transducer die; and

a molded body formed at least partially around the electrical connectors and around the pressure sensor transducer die without covering the exposed die flag, where the molded body protects the sensor circuitry formed on the topside of the pressure sensor transducer die from corrosive external environmental conditions.

2. The packaged pressure sensor of claim 1 , further comprising a protective gel covering at least part of the topside of the pressure sensor transducer die without covering the sensor diaphragm on the backside.

3. The packaged pressure sensor of claim 1 , where the exposed die flag is recessed with respect to a plurality of lead frame elements forming at least part of the electrical connectors so that the plurality of lead frame elements extend through a side surface of the molded body, while a bottom surface of the molded body is formed to be flush with the exposed die flag.

4. The packaged pressure sensor of claim 1 , where the pressure sensor transducer die comprises a piezoresistive transducer die.

5. The packaged pressure sensor of claim 1 , where the pressure sensor transducer die comprises a piezoresistive transducer die formed from a monocrystalline silicon substrate layer in which an opening is formed to define the sensor diaphragm.

6. The packaged pressure sensor of claim 1 , where the one or more electrical connectors comprise:

one or more bond pads formed on the topside of the pressure sensor transducer die;

a wire connector connected to each of the one or more bond pads; and

a lead frame element connected to each wire connector, where the lead frame element extends through the molded body.

7. The packaged pressure sensor of claim 1 , where the molded body comprises a QFN (Quad Flat No leads), SOIC (Small-Outline Integrated Circuit), QFP (Quad Flat Package), or LGA (Land Grid Array) packaging body.

8. A method for packaging an exposed pressure sensor, comprising:

affixing a piezoresistive transducer die to a die flag so that a sensor diaphragm formed on a backside of the piezoresistive transducer die is vented through a vent hole formed in the die flag;

electrically connecting circuitry formed on a topside of the piezoresistive transducer die to one or more electrical connectors; and

forming a molded body at least partially around the one or more electrical connectors and around the piezoresistive transducer die to cover at least the circuitry on the topside of the piezoresistive transducer die and to leave exposed the die flag, where the molded body protects the circuitry formed on the topside of the piezoresistive transducer die from external environmental conditions.

9. The method of claim 8 , where affixing the piezoresistive transducer die to the die flag comprises die bonding the backside of the piezoresistive transducer die to a lead frame so that the sensor diaphragm formed on the backside of the piezoresistive transducer die is aligned with the vent hole formed in the die flag.

10. The method of claim 8 , where affixing the piezoresistive transducer die to the die flag comprises attaching the backside of the piezoresistive transducer die to a lead frame comprising a recessed die flag that is recessed with respect to a plurality of lead frame elements so that a bottom surface of the molded body is flush with the recessed die flag in which the vent hold is formed.

11. The method of claim 8 , where the piezoresistive transducer die comprises a monocrystalline silicon substrate layer having a backside surface in which an opening is formed to define the sensor diaphragm.

12. The method of claim 8 , where electrically connecting circuitry comprises wire coupling one or more bond pads formed on the topside of the piezoresistive transducer die to one or more lead frame electrical connectors.

13. The method of claim 8 , where electrically connecting circuitry comprises thermosonically bonding wire connectors to electrically connect one or more bond pads formed on the topside of the piezoresistive transducer die to one or more lead frame electrical connectors.

14. The method of claim 8 , further comprising dispensing a protective gel over the circuitry formed on the topside of the piezoresistive transducer die prior to forming the molded body and without covering the sensor diaphragm on the backside of the piezoresistive transducer die.

15. The method of claim 8 , where forming the molded body comprises overmolding or transfer molding a composite material to cover at least the circuitry on the topside of the piezoresistive transducer die without covering the vent hole formed in the die flag.

16. The method of claim 8 , where forming the molded body comprises forming a QFN (Quad Flat No leads), SOIC (Small-Outline Integrated Circuit), QFP (Quad Flat Package), or LGA (Land Grid Array) packaging body.

17. A packaged pressure sensor, comprising:

a molded body housing with an opening formed in a bottom surface of the molded body housing;

an exposed pad attached to the bottom surface of the molded body housing to enclose the opening except for a vent hole that is formed in the exposed pad;

a backside piezoresistive transducer die having a diaphragm which is placed in the enclosed opening and attached to the exposed pad so that the diaphragm is vented through the vent hole; and

at least a first electrical connector protruding through said molded body housing that is electrically coupled to the backside piezoresistive transducer die.

18. The packaged pressure sensor of claim 17 , where the first electrical connector comprises:

one or more bond pads formed on the backside piezoresistive transducer die;

a wire connector connected to each of the one or more bond pads; and

a lead frame element connected to each wire connector, where the lead frame element extends through the molded body housing.

19. The packaged pressure sensor of claim 17 , where the molded body housing comprises a QFN (Quad Flat No leads), SOIC (Small-Outline Integrated Circuit), QFP (Quad Flat Package), or LGA (Land Grid Array) packaging body.

20. The packaged pressure sensor of claim 17 , comprising a protective gel covering one or more circuits or conductors formed on a topside of the backside piezoresistive transducer die without covering the diaphragm on a backside of the backside piezoresistive transducer die.

Assignments (15)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
Reel/Frame 037694/0264 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0793 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded May 19, 2009
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
Reel/Frame 022703/0405 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2009
From: HOOPER, STEPHEN R.; MACDONALD, JAMES D.; MCDONALD, WILLIAM G.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 022232/0219 →