Granted Patent B1

US 8,137,517 · App. 12/368,951 · Granted Mar 20, 2012

Abstract

Claims (37)

1. A sputtering system, comprising:

a first sputtering assembly configured to sputter material onto a first disk, the first sputtering assembly including:

a first anode;

a first cathode;

a first target electrically coupled to at least one of the first anode and the first cathode; and

a first magnetic ring; and

a second sputtering assembly configured to sputter material onto a second disk, the second sputtering assembly positioned proximate to the first sputtering assembly and including:

a second anode;

a second cathode;

a second target electrically coupled to at least one of the second anode and the second cathode; and

a second magnetic ring;

wherein the first magnetic ring includes a first region of lower relative magnetic strength than other portions of the first magnetic ring, so that the first region of the first magnetic ring is positioned near the second magnetic ring, and the second magnetic ring includes a second region of lower relative magnetic strength than other portions of the second magnetic ring, so that the second region of the second magnetic ring is positioned near the first magnetic ring.

2. The sputtering system of claim 1 , wherein the first disk and the second disk are positioned such that a center axis of the first disk is approximately 15 cm apart from a center axis of the second disk.

3. The sputtering system of claim 1 , wherein the first anode is electrically coupled to ground and the first cathode is configured to reach an electrical potential of less than −300 V.

4. The sputtering system of claim 1 , wherein the first target and the second target each includes a magnetic alloy.

5. The sputtering system of claim 1 , wherein the first target and the second target each includes a non-magnetic materials material.

6. The sputtering system of claim 1 , wherein the first target is electrically coupled to the first cathode, and the second target is electrically coupled to the second cathode.

7. The sputtering system of claim 1 , wherein the first cathode is less than 3 cm apart from the second cathode.

8. The sputtering system of claim 7 , wherein the first cathode is less than 1.5 cm apart from the second cathode.

9. The sputtering system of claim 1 , wherein the first magnetic ring includes a first plurality of permanent magnets, and the second magnetic ring includes a second plurality of permanent magnets.

10. The sputtering system of claim 9 , wherein the first region of lower relative magnetic strength includes at least one permanent magnet less than 10% weaker than other magnets of the first plurality of permanent magnets, and the second region of lower relative magnetic strength includes at least one permanent magnet less than 10% weaker than other magnets of the second plurality of permanent magnets.

11. The sputtering system of claim 10 , wherein the first region of lower relative magnetic strength includes at least one permanent magnet approximately 5% weaker than other magnets of the first plurality of permanent magnets, and the second region of lower relative magnetic strength includes at least one permanent magnet approximately 5% weaker than other magnets of the second plurality of permanent magnets.

12. The sputtering system of claim 1 , wherein the first sputtering assembly further includes a first inner magnetic ring concentric with and positioned within the first magnetic ring, and the second sputtering assembly further includes a second inner magnetic ring concentric with and positioned within the second magnetic ring.

13. The sputtering system of claim 12 , wherein the first magnetic ring is oriented such that a north pole is configured to face the first disk, and the first inner magnetic ring is oriented such that a south pole is configured to face the first disk.

14. The sputtering system of claim 1 , further comprising:

a third sputtering assembly configured to sputter material onto the first disk, the third sputtering assembly positioned opposite the first sputtering assembly and including:

a third anode;

a third cathode;

a third target electrically coupled to at least one of the third anode and the third cathode; and

a third magnetic ring; and

a fourth sputtering assembly configured to sputter material onto the second disk, the fourth sputtering assembly positioned opposite the second sputtering assembly and including:

a fourth anode;

a fourth cathode;

a fourth target electrically coupled to at least one of the fourth anode and the fourth cathode; and

a fourth magnetic ring;

wherein the third magnetic ring includes a third region of lower relative magnetic strength than other portions of the third magnetic ring, so that the third region of the third magnetic ring is positioned near the fourth magnetic ring and the fourth magnetic ring includes a fourth region of lower relative magnetic strength than other portions of the fourth magnetic ring, so that the fourth region of the fourth magnetic ring is positioned near the third magnetic ring.

15. The sputtering system of claim 1 , further comprising a vacuum insulator positioned between the first cathode and the second cathode.

Assignments (8)