Memory with reduced power supply voltage for a write operation
View Patent ↗A memory includes a selection circuit and a write assist circuit. The selection circuit has a first input, a second input coupled to a first power supply voltage terminal, an output coupled to a power supply terminal of each of a plurality of memory cells, and a control input for receiving a write assist control signal. The write assist circuit is coupled to the first input of the selection circuit for reducing a voltage at the power supply terminal of each of the plurality of memory cells during a write operation and in response to an asserted write assist enable signal. The write assist circuit comprises a P-channel transistor and a bias voltage generator. The P-channel transistor is for reducing the voltage at the power supply terminal of each of the plurality of memory cells during the write operation. The bias voltage generator is for providing a variable bias voltage to the P-channel transistor.
1. A memory comprising:
a first plurality of memory cells, each of the first plurality of memory cells having a first terminal coupled to a bit line, a second terminal coupled to a word line, and a power supply terminal;
a first selection circuit having a first input, a second input coupled to a first power supply voltage terminal, an output coupled to the power supply terminal of each of the first plurality of memory cells, and a control input for receiving a first write assist control signal; and
a first write assist circuit coupled to the first input of the first selection circuit, the first write assist circuit for reducing a voltage at the power supply terminal of each of the first plurality of memory cells to a first predetermined magnitude during a write operation and in response to an asserted first write assist enable signal, the first write assist circuit comprising:
a first transistor of the first conductivity type having a first current electrode coupled to the first input, a second current electrode selectively coupled to a second power supply voltage terminal, and a control electrode coupled to receive a first variable bias voltage, the first transistor of the first conductivity type for modifying a voltage at the power supply terminal of each memory cell of the plurality of memory cells to the first predetermined magnitude during the write operation; and
a first bias voltage generator coupled to the control electrode of the first transistor of the first conductivity type, the first bias voltage generator for providing the first variable bias voltage in response to the asserted first write assist enable signal.
2. The memory of claim 1 , wherein the first transistor of the first conductivity type comprises a first P-channel transistor and wherein the first bias voltage generator comprises:
a second P-channel transistor having a first current electrode coupled to a third power supply voltage terminal, and a control electrode and a second current electrode both coupled to the control electrode of the first P-channel transistor;
a first trimmable resistance having a first terminal coupled to the control electrode of the first P-channel transistor, and a second terminal coupled to the second current electrode of the first P-channel transistor, the first trimmable resistance for setting the first variable bias voltage to provide the first predetermined magnitude; and
a first N-channel transistor having a first current electrode coupled to the second terminal of the first P-channel transistor, a control electrode, and a second current electrode coupled to the second power supply voltage terminal.
3. The memory of claim 2 , further comprising a third P-channel transistor having a first current electrode coupled to a fourth power supply voltage terminal, a control electrode coupled to the control electrode of the first N-channel transistor, and a second current electrode coupled to the first input of the first selection circuit.
4. The memory of claim 3 , further comprising a logic gate having a first input for receiving a clock signal, a second input for receiving a write enable signal, a third input for receiving a write assist enable signal, and an output coupled to the control electrode of the first N-channel transistor.
5. The memory of claim 1 , wherein the first plurality of memory cells is characterized as being a plurality of static random access memory cells.
6. The memory of claim 1 , further comprising:
a second plurality of memory cells, each of the second plurality of memory cells having a first terminal coupled to a bit line, a second terminal coupled to a word line, and a power supply terminal;
a second selection circuit having a first input, a second input coupled to the first power supply voltage terminal, an output coupled to the power supply terminal of each of the second plurality of memory cells, and a control input for receiving a second write assist control signal; and
a second write assist circuit coupled to the first input of the second selection circuit, the second write assist circuit for reducing a voltage at the power supply terminal of each of the second plurality of memory cells to a second predetermined magnitude during a write operation and in response to an asserted second write assist enable signal, the second write assist circuit comprising:
a second P-channel transistor having a first current electrode coupled to the first input of the second selection circuit, a second current electrode selectively coupled to the second power supply voltage terminal, and a control electrode coupled to receive a second variable bias voltage, the second P-channel transistor for reducing a voltage at the power supply terminal of each memory cell of the plurality of memory cells to the second predetermined magnitude during the write operation; and
a second bias voltage generator coupled to the control electrode of the second P-channel transistor, the second bias voltage generator for providing the second variable bias voltage in response to the asserted second write assist enable signal.
7. The memory of claim 6 , wherein the second predetermined magnitude is different than the first predetermined magnitude.
8. A memory comprising:
a first plurality of memory cells, each of the first plurality of memory cells having a first terminal coupled to a bit line, a second terminal coupled to a word line, and a power supply terminal;
a first selection circuit having a first input, a second input coupled to a first power supply voltage terminal, an output coupled to the power supply terminal of each of the first plurality of memory cells, and a control input for receiving a first write assist control signal; and
a first write assist circuit coupled to the first input of the first selection circuit, the first write assist circuit for modifying a voltage at the power supply terminal of each of the first plurality of memory cells to a first predetermined magnitude during a write operation and in response to an asserted write assist enable signal, the first write assist circuit comprising:
a first transistor having a first current electrode coupled to the first input, a second current electrode selectively coupled to a second power supply voltage terminal, and a control electrode coupled to receive a bias voltage; and
a first resistance having a first terminal coupled to the control electrode of the first transistor, and a second terminal, the first resistance for setting the bias voltage to provide the first predetermined magnitude.
9. The memory of claim 8 , further comprising:
a second transistor having a first current electrode coupled to the first power supply voltage terminal, and a control electrode and a second current electrode coupled to the first terminal of the first resistance; and
a third transistor having a first current electrode coupled to both the second terminal of the first resistance and the second current electrode of the first transistor, a control electrode, and a second current electrode coupled to a second power supply voltage terminal.
10. The memory of claim 9 , further comprising a logic gate having a first input for receiving a clock signal, a second input for receiving a write enable signal, a third input for receiving a write assist enable signal, and an output coupled to the control electrode of the third transistor.
11. The memory of claim 10 , further comprising a fourth transistor having a first current electrode coupled to a third power supply voltage terminal, a control electrode coupled to the control electrode of the third transistor, and a second current electrode coupled to the first input of the first selection circuit.
12. The memory of claim 8 , wherein the first resistance includes a plurality of selectable series-connected resistors.
13. The memory of claim 8 , wherein the first resistance includes a plurality of selectable parallel-connected resistors.
14. The memory of claim 8 , wherein the first plurality of memory cells is characterized as being a plurality of static random access memory cells.
15. The memory of claim 8 , further comprising:
a second plurality of memory cells, each of the second plurality of memory cells having a first terminal coupled to a bit line, a second terminal coupled to a word line, and a power supply terminal;
a second selection circuit having a first input, a second input coupled to a first power supply voltage terminal, an output coupled to the power supply terminal of each of the second plurality of memory cells, and a control input for receiving a second write assist control signal; and
a second write assist circuit coupled to the first input of the second selection circuit, the second write assist circuit for reducing a voltage at the power supply terminal of each memory cell of the plurality of memory cells of the second plurality of memory cells to a second predetermined magnitude during a write operation of the second plurality of memory cells and in response to an asserted write assist enable signal, the second write assist circuit comprising:
a second transistor having a first current electrode coupled to the first input, a second current electrode, and a control electrode coupled to receive a bias voltage; and
a second resistance having a first terminal coupled to the control electrode, and a second terminal, the second resistance for setting the bias voltage to provide the second predetermined magnitude.
16. The memory of claim 15 , wherein the second predetermined magnitude is different than the first predetermined magnitude.
17. A memory comprising:
a first memory array comprising a plurality of memory cells, each memory cell of the plurality of memory cells having a first terminal coupled to a bit line, a second terminal coupled to a word line, and a power supply terminal;
a first selection circuit having a first input, a second input coupled to a first power supply voltage terminal, an output coupled to the power supply terminal of each of the plurality of memory cells, and a control input for receiving a first write assist control signal;
a first write assist circuit coupled to the first input of the first selection circuit, the first write assist circuit comprising:
a first transistor having a first current electrode coupled to the first input of the first selection circuit, a second current electrode, and a control electrode coupled to receive a first bias voltage; and
a first trimmable resistance having a first terminal coupled to the control electrode of the first transistor, and a second terminal selectively coupled to a second power supply voltage terminal, the first trimmable resistance for setting the first bias voltage to have a first predetermined magnitude;
a second memory array comprising a plurality of memory cells, each memory cell having a first terminal coupled to a bit line, a second terminal coupled to a word line, and a power supply terminal;
a second selection circuit having a first input, a second input coupled to a third power supply voltage terminal, an output coupled to the power supply terminal of each of the plurality of memory cells of the second memory array, and a control input for receiving a second write assist control signal; and
a second write assist circuit coupled to the first input of the second selection circuit, the second write assist circuit comprising:
a second transistor having a first current electrode coupled to the first input of the second selection circuit, a second current electrode, and a control electrode coupled to receive a second bias voltage; and
a second trimmable resistance having a first terminal coupled to the control electrode of the second transistor, and a second terminal selectively coupled to a fourth power supply voltage terminal, the second trimmable resistance for setting the second bias voltage to have a second predetermined magnitude, wherein the second predetermined magnitude is different than the first predetermined magnitude.
18. The memory of claim 17 , wherein the first and second memory arrays each comprises a plurality of static random access memory cells.
19. The memory of claim 17 , wherein the first write assist circuit further comprises:
a third transistor having a first current electrode coupled to a fifth power supply voltage terminal, a control electrode and a second current electrode both coupled to the control electrode of the first transistor;
a fourth transistor having a first current electrode coupled to the second terminal of the first trimmable resistance, a control electrode, and a second current electrode coupled to the second power supply voltage terminal; and
a fifth transistor having a first current electrode coupled to a sixth power supply voltage terminal, a control electrode coupled to the control electrode of the fourth transistor, and a second current electrode coupled to first input of the first selection circuit.
20. The memory of claim 19 , wherein the first and third transistors are P-channel transistors, and the fourth transistor is an N-channel transistor.