High side high voltage switch with over current and over voltage protection
View Patent ↗A method and apparatus are described for providing a current mirror type high voltage switching circuit ( 60 ) having a reference branch (M 2 , M 3 , R 1 ) and a tracking branch (M 1 , M 5 ), where the output peak current is limited by adding an additional branch (M 4 , M 6 ) to the current mirror circuit which includes an additional mirror transistor (M 4 ) and cascode transistor (M 6 ), and where over voltage protection is provided by including a shut-off circuit (Q 1 , Q 2 ) which turns “OFF” the cascode transistors (M 5 -M 8 ) whenever the output voltage (Vout) exceeds the first reference voltage (Vbat) by a predetermined amount.
1. A current mirror type high voltage switching circuit, comprising:
a first current branch connected between a first reference voltage and an output voltage load for generating a first control current;
a second current branch connected between the first reference voltage and the output voltage load for generating a load current that is larger than the first control current; and
a third current branch connected between the first reference voltage and a second reference voltage for generating a third reference voltage in response to a control voltage developed by the first control current, where the third reference voltage controls the first, second and third current branches so that the load current increases as the output voltage across the output voltage load decreases to a first threshold voltage, decreases as the output voltage decreases to a second lower threshold voltage, and then stabilizes as the output voltage decreases below the second lower threshold voltage.
2. The current mirror type high voltage switching circuit of claim 1 , where the first current branch comprises a degeneration resistor, a first mirror transistor, and a first cascode transistor connected between the first reference voltage and the output voltage load.
3. The current mirror type high voltage switching circuit of claim 1 , where the first current branch comprises a first mirror transistor and first cascode transistor connected between the first reference voltage and the output voltage load.
4. The current mirror type high voltage switching circuit of claim 3 , where the second current branch comprises a second mirror transistor and second cascode transistor connected between the first reference voltage and the output voltage load, where control terminals of the first and second mirror transistors are connected to the third reference voltage, and where sources of the first and second mirror transistors are coupled to the first reference voltage.
5. The current mirror type high voltage switching circuit of claim 4 , where the third current branch comprises a third mirror transistor and an activation transistor connected between the first reference voltage and the third reference voltage, where control terminals of the first, second and third mirror transistors are connected to the third reference voltage, where sources of the first, second and third mirror transistors are coupled to the first reference voltage, and where a control terminal of the activation transistor is connected to a drain of the first mirror transistor.
6. The current mirror type high voltage switching circuit of claim 4 , further comprising:
a first shut-off circuit which disconnects the first cascode transistor from the first mirror transistor whenever an output voltage developed across the output voltage load exceeds the first reference voltage by a predetermined amount; and
a second shut-off circuit which disconnects the second cascode transistor from the second mirror transistor whenever an output voltage developed across the output voltage load exceeds the first reference voltage by a predetermined amount.
7. The current mirror type high voltage switching circuit of claim 6 , where the first shut-off circuit comprises a first cut-off transistor connected between the first mirror transistor and the first cascode transistor, where the first cut-off transistor has a gate and source that are connected across first and second current terminals of a first shorting transistor which is saturated when the output voltage load exceeds the first reference voltage by a predetermined amount.
8. The current mirror type high voltage switching circuit of claim 7 , where the second shut-off circuit comprises a second cut-off transistor connected between the second mirror transistor and the second cascode transistor, where the second cut-off transistor has a gate and source that are connected across first and second current terminals of a second shorting transistor which is saturated when the output voltage load exceeds the first reference voltage by a predetermined amount.
9. The current mirror type high voltage switching circuit of claim 7 , where the first shorting transistor comprises a PNP bipolar junction transistor.
10. A current mirror type high voltage switching circuit comprising:
first and second mirror transistors having gates connected to each other and sources coupled to a first reference voltage;
an activation transistor having a drain connected to the gates of the first and second mirror transistors and across a first resistive load to a second reference voltage, a source connected to a drain of the second mirror transistor, and a gate connected to a drain of the first mirror transistor; and
a first cascode transistor having a source coupled to the drain of the first mirror transistor, a drain connected to an output voltage load, and a gate coupled to the second reference voltage, such that a control current at the drain of the first mirror transistor develops a control voltage at the gate of the activation transistor to activate the activation transistor, thereby turning ON the second mirror transistor when the output voltage decreases to a first threshold voltage.
11. The current mirror type high voltage switching circuit of claim 10 , further comprising a degeneration resistor connected between the first reference voltage and the source of the first mirror transistor.
12. The current mirror type high voltage switching circuit of claim 10 , further comprising:
a third mirror transistor having a gate connected the gates of the first and second mirror transistors and a source connected to the first reference voltage; and
a second cascode transistor having a source coupled to the drain of the third mirror transistor, a drain connected to the output voltage load, and a gate coupled to the second reference voltage, such that a high current may pass trough the third mirror transistor and second cascode transistor that is larger than the control current at the drain of the first mirror transistor.
13. The current mirror type high voltage switching circuit of claim 12 , further comprising:
a first shut-off circuit which disconnects the first cascode transistor from the first mirror transistor whenever an output voltage developed across the output voltage load exceeds the first reference voltage by a predetermined amount; and
a second shut-off circuit which disconnects the second cascode transistor from the third mirror transistor whenever an output voltage developed across the output voltage load exceeds the first reference voltage by a predetermined amount.
14. The current mirror type high voltage switching circuit of claim 13 , where the first shut-off circuit comprises a first cut-off transistor connected between the first mirror transistor and the first cascode transistor, where the first cut-off transistor has a gate and source that are connected across collector and emitter terminals of a first PNP bipolar junction transistor which is saturated when the output voltage load exceeds the first reference voltage by a predetermined amount.
15. The current mirror type high voltage switching circuit of claim 13 , where the second shut-off circuit comprises a second cut-off transistor connected between the second mirror transistor and the second cascode transistor, where the second cut-off transistor has a gate and source that are connected across collector and emitter terminals of a second PNP bipolar junction transistor which is saturated when the output voltage load exceeds the first reference voltage by a predetermined amount.
16. The current mirror type high voltage switching circuit of claim 10 , further comprising:
a first shorting transistor that is source-drain connected across the second mirror transistor and activation transistor and that has a gate connected to receive a first input control signal so that the drain of the activation transistor is shorted to the first reference voltage across the first shorting transistor in response to the first input control signal; and
a second follower transistor having a drain connected to the second reference voltage, a source coupled to the gate of the first cascode transistor, and a gate connected to receive a second input control signal that is inverted with respect to the first input control signal.
17. A method of implementing a switched circuit, comprising:
providing a controlled current to an output load from a power supply through a first current path comprising a first transistor and first cascode transistor when an output voltage developed at the output load is in a high output voltage region, where the first cascode transistor is coupled between the first transistor and the output load and is gated by a second reference voltage which is offset from the power supply by a predetermined offset voltage to provide a maximum voltage drop between the power supply and the gate of the first cascode transistor;
providing a peak output current to the output load from the power supply through the first current path and a second current path comprising a second transistor and second cascode transistor when the output voltage developed at the output load is in a transition output voltage region, where the second cascode transistor is coupled between the second transistor and the output load and is gated by the second reference voltage to provide a maximum voltage drop between the power supply and the gate of the second cascode transistor; and
providing a limited current to the output load from the power supply through the first current path and second current path when the output voltage developed at the output load is in a low output voltage region.
18. The method of claim 17 , where a drain-to-source voltage drop over the first transistor controls the first transistor to provide a relatively low on-resistance when the output voltage developed at the output load is in the high output voltage region, and where the drain-to-source voltage drop over the first transistor controls the first and second transistors to provide the controlled current when the output voltage developed at the output load is in the low output voltage region.
19. The method of claim 17 , further comprising disconnecting the first and second transistors from the first and second cascode transistors whenever the output voltage developed at the output load exceeds the power supply voltage by a predetermined amount.
20. The method of claim 19 , further comprising saturating first and second PNP bipolar junction transistors which are, respectively, connected across the source and gate terminals of the first and second cascode transistors whenever the output voltage developed at the output load exceeds the power supply voltage by a predetermined amount.