Method for manufacturing a semiconductor integrated circuit device
View Patent ↗A method is provided for manufacturing a QFN type semiconductor integrated circuit device using a multi-device lead frame having a tie bar for tying external end portions of plural leads, wherein sealing resin filled between an outer periphery of a mold cavity and the tie bar is removed by a laser and thereafter a surface treatment such as solder plating is performed.
1. A method for manufacturing a semiconductor integrated circuit device, comprising the steps of:
(a) setting to a molding die a lead frame having a plurality of unit device regions and with a semiconductor chip being fixed in each of the unit device regions, and sealing the semiconductor chip with sealing resin to form a resin sealing body in each of the unit device regions, each of the unit device regions comprising: (i) a generally quadrangular die pad with the semiconductor chip fixed thereto; (ii) a plurality of leads extending from the exterior of each side of the die pad so as to form a plane almost flush with a bottom of the resin sealing body and projecting from each of side faces of the resin sealing body; (iii) a tie bar for coupling the vicinities of outer end portions of the leads; and (iv) lead-to-lead resin projecting portions each filling between adjacent ones of the leads and projecting from the side faces of the resin sealing body;
(b) after the step (a), radiating laser light to the lead-to-lead resin projecting portions in each of the unit device regions to remove the lead-to-lead resin projecting portions;
(c) after the step (b), forming solder layers over exposed surfaces respectively of the leads in each of the unit device regions; and
(d) after the step (c), cutting the external end portions of the leads in each of the unit device regions, thereby separating the leads and the tie bar from each other on each side of the resin sealing body and cutting and separating the resin sealing body from the lead frame.
2. A method according to claim 1 , wherein, in the step (b), the laser light is radiated also to the leads to remove resin burrs formed over the leads.
3. A method according to claim 2 , further comprising the step of:
(e) after the step (b) and before the step (c), performing electrolysis for surfaces of the leads in an aqueous solution using the leads as cathodes.
4. A method according to claim 3 , further comprising the step of:
after the step (e) and before the step (c), performing a water jet treatment for the surfaces of the leads.
5. A method according to claim 4 , wherein the sealing in the step (a) is performed by transfer molding.
6. A method according to claim 1 , wherein the laser light is near infrared light.
7. A method according to claim 1 , wherein the laser light is emitted from a YAG laser.
8. A method according to claim 1 , wherein a wavelength of the laser light is 1064 nm.
9. A method according to claim 1 , wherein the total number of the leads projecting from the resin sealing body in each of the unit device regions is in the range of 20 to 150.
10. A method according to claim 1 , wherein the total number of the leads projecting from the resin sealing body in each of the unit device regions is in the range of 40 to 150.
11. A method according to claim 1 , wherein the total number of the leads projecting from the resin sealing body in each of the unit device regions in the range of 50 to 150.
12. A method according to claim 1 , wherein a length of projection of each of the leads is in the range of 0.1 to 0.5 mm.
13. A method according to claim 1 , wherein a length of projection of each of the leads is in the range of 0.2 to 0.4 mm.
14. A method according to claim 1 , wherein a pitch of the leads is in the range of 0.2 to 0.8 mm.
15. A method according to claim 1 , wherein a thickness of the resin sealing body is in the range of 0.3 to 1.2 mm.
16. A method according to claim 1 , wherein a width of the resin sealing body is in the range of 3 to 10 mm.
17. A method according to claim 1 , wherein a material of a main portion of the lead frame contains copper as a principal component.
18. A method according to claim 1 , wherein the lead frame has a thick portion of 0.1 to 0.3 mm in thickness.
19. A method according to claim 1 , wherein the solder layers are free of lead.
20. A method according to claim 1 , wherein the sealing resin is free of halogen.