Laser decapsulation method

1. A method of manufacturing integrated circuits, the method comprising;

forming encapsulated integrated circuits; and

sampling select integrated circuits to verify if the finished integrated circuits are made to manufacturing specifications by selectively removing portions of the encapsulation with a laser that is suitable for breaking cross linked bonds of the encapsulant without damaging the integrated circuits, wherein a thin layer of encapsulant is left on at least one portion of at least one of the sampled integrated circuits.

2. The method of claim 1 , wherein selectively removing portions of the encapsulant of the select sampled integrated circuits further comprises:

monitoring amplitude and frequency of the laser light reflected of each selected integrated circuit; and

when a change in at least one of the amplitude and frequency is detected, moving each selected integrated circuit.

3. The method of claim 2 , wherein moving each selected integrated circuit further comprises:

advancing a stage upon which the select integrated circuit is mounted on.

4. The method of claim 1 , wherein selectively removing portions of the encapsulant of the select sampled integrated circuits with a laser further comprises:

using a laser with wavelengths in the infrared range that includes at least one range of 725-900 cm-1, 1150-1300 cm-1, 1400-1500 cm-1 and 1600-1750 cm-1.

5. The method of claim 1 , wherein selectively removing portions of the encapsulation of the select sampled integrated circuits with a laser further comprises:

using at least one of a YAG laser and an infrared laser.

6. The method of claim 1 , wherein selectively removing portions of the encapsulation of the select sampled integrated circuits further comprises:

changing an angle of incident of the laser by rotating a stage upon which the integrated circuits are mounted.

7. The method of claim 1 , further comprising:

testing the thin layer of encapsulant for contaminates.

8. The method of claim 1 , wherein selectively removing portions of the encapsulation of the select sampled integrated circuits further comprises:

removing debris caused by the removal of select portions of encapsulate by at least one of using a flow of gas to direct the debris away from the integrated circuits and capturing the debris in a dust bin.

9. A method of manufacturing integrated circuits, the method comprising:

forming integrated circuits with a manufacturing process, wherein each integrated circuit is encapsulated to protect the integrated circuit from environmental factors;

selecting certain formed integrated circuits;

placing each selected integrated circuit on a stage in an enclosure;

directing a laser beam having a select wavelength on a select portion of the encapsulant to remove the select portion of encapsulant, wherein with at least one of the select integrated circuits the select removed portion of encapsulant has a depth, the depth being less than a thickness of the encapsulant;

monitoring the laser beam reflected off of the integrated circuit;

moving the stage based at least in part on the monitored reflected laser beam;

terminating the laser beam based at least in part on the monitored reflect laser beam; and

testing the selected integrated circuits with the select portion of encapsulant removed to verify that the integrated circuits are formed to manufacture specifications.

10. The method of claim 9 , further comprising:

exhausting debris from the enclosure.

11. The method of claim 10 , wherein exhausting debris from the stage further comprises:

directing a flow of gas to disperse the debris away from the integrated circuit.

12. The method of claim 9 , further comprising:

catching debris particles in a dust bin.

13. The method of claim 9 , further comprising:

testing for contaminates in a thin layer of encapsulant left on the at least one select integrated circuit having the select removed portion with a depth less than the depth of the encapsulant.

14. A manufacturing method of removing encapsulant from an integrated circuit; the method comprising:

placing an integrated circuit on a stage in an enclosure;

directing a laser beam on the encapsulation of the integrated circuit, wherein the laser beam has a wavelength that is suitable for breaking cross linked bonds of the encapsulant without damaging the underlying integrated circuit;

removing at least one select portion of the encapsulant with the laser beam; and

capturing debris particles in a dust bin.

15. The method of claim 14 , further comprising:

monitoring the laser beam reflected off of the integrated circuit; and

based at least in part on the monitored laser beam, doing at least one of moving the stage and terminating the laser beam.

16. The method of claim 14 , further comprising:

after the removing the at least one select portion of the encapsulant, verifying the integrated circuit is made to manufacturing specifications.

17. The method of claim 14 , further comprising:

directing a flow of gas to move the debris away from the integrated circuit.

18. The method of claim 14 , further comprising:

leaving a thin layer of encapsulant at the at least one select portion, and

testing for contaminates in the thin layer of encapsulant.

19. A method of removing encapsulant from a encapsulated device, the method comprising:

placing an encapsulated device on a stage in an enclosure;

directing a laser beam on the encapsulation of the encapsulated device;

removing at least one select portion of the encapsulant with the laser beam; and

leaving a thin layer of encapsulant on the encapsulated device at the at least one select portion.

20. The method of claim 19 , and further including capturing debris particles in a dust bin.

21. The method of claim 19 , and further including:

rotating the stage until the encapsulated device is in a substantially vertical position in the enclosure.

22. The method of claim 19 , and further comprising:

testing for contaminants in the thin layer of encapsulant.

23. The method of claim 19 , wherein directing a laser beam further comprises:

directing a laser beam with wavelengths in the infrared range that includes at least one range of 725 - 900 cm - 1 , 1150 - 1300 cm - 1 , 1400 - 1500 cm - 1 and 1600 - 1750 cm - 1 .

24. The method of claim 19 , wherein directing a laser beam further comprises:

using at least one of a YAG laser and an infrared laser.

25. The method of claim 19 , wherein removing at least one select portion of the encapsulant with the laser beam further comprises:

changing an angle of incidence of the laser by rotating a stage upon which the encapsulated devices are mounted.

26. The method of claim 19 wherein directing a laser beam comprises directing a laser beam with a wavelength that is suitable for breaking cross linked bonds of the encapsulant without damaging the underlying encapsulated device.

27. A method of manufacturing encapsulated devices, the method comprising:

forming encapsulated devices with a manufacturing process, wherein each encapsulated device is encapsulated to protect the encapsulated device from environmental factors;

selecting certain formed encapsulated devices;

placing each selected encapsulated device on a stage in an enclosure;

directing a laser beam having a select wavelength on a select portion of the encapsulant to remove the select portion of encapsulant;

catching debris particles in a dust bin; and

testing the selected encapsulated devices with the select portion of encapsulant removed to verify that the encapsulated devices are formed to manufacture specifications.

28. The method of claim 27 , and further comprising:

monitoring the laser beam reflected off of the encapsulated device;

moving the stage based at least in part on the monitored reflected laser beam; and

terminating the impingement of the laser beam based at least in part on the monitored reflected laser beam.