STACKED SOLAR CELL
A solar cell including a first semiconductor layer formed by sequentially stacking a positive (P) layer, an intrinsic (I) layer and a negative (N) layer, wherein the P layer comprises amorphous silicon carbide and at least one of the I and N layers comprises micro-crystalline silicon.
1 . A solar cell, comprising:
a first semiconductor layer formed by sequentially stacking a positive (P) layer, an intrinsic (I) layer, and a negative (N) layer,
wherein the P layer comprises amorphous silicon carbide and at least one of the I and N layers comprises micro-crystalline silicon.
2 . The solar cell of claim 1 , further comprising:
a second semiconductor layer adjacent to the first semiconductor layer, wherein the second semiconductor layer comprises a P layer, an I layer, and an N layer, and
wherein at least one of the P, I, and N layers of the second semiconductor layer comprises amorphous silicon.
3 . The solar cell of claim 2 , wherein the second semiconductor layer is disposed closer to a light incident side of the solar cell than the first semiconductor layer.
4 . The solar cell of claim 3 , further comprising:
a third semiconductor layer formed between the first and second semiconductor layers, wherein the third semiconductor layer is formed by sequentially stacking a P layer, an I layer and an N layer, and
wherein the I layer and the N layer of the third semiconductor layer comprise amorphous silicon germanium (a-SiGe).
5 . The solar cell of claim 2 , wherein the I layer of the first semiconductor layer comprises an incubation layer adjacent to a top surface of the P layer of the first semiconductor layer.
6 . The solar cell of claim 5 , wherein the incubation layer comprises amorphous silicon.
7 . The solar cell of claim 6 , wherein the second semiconductor layer is disposed closer to a light incident side of the solar cell than the first semiconductor layer.
8 . The solar cell of claim 2 , wherein the I layer of the first semiconductor layer has different degrees of crystallization in a vertical direction.
9 . The solar cell of claim 2 , wherein the P, I, and N layers of the second semiconductor layer are sequentially stacked on a substrate, and the solar cell further comprises a transparent conductive film formed between the substrate and the second semiconductor layer.
10 . The solar cell of claim 1 , further comprising:
a rear electrode disposed on the first semiconductor layer.
11 . A stacked solar cell, comprising:
a substrate;
a transparent conductive film formed on the substrate;
a plurality of semiconductor layers each including a positive (P) layer, an intrinsic (I) layer, and a negative (N) layer, wherein the plurality of semiconductor layers are sequentially stacked on the transparent conductive film; and
a rear electrode disposed on a semiconductor layer disposed farthest from the transparent conductive film,
wherein a first semiconductor layer has an I layer comprising micro-crystalline silicon and a second semiconductor layer has an I layer comprising amorphous silicon, the first semiconductor layer and the second semiconductor layer are adjacent to each other, and a P layer of the first semiconductor layer comprises amorphous silicon carbide.
12 . The stacked solar cell of claim 11 , wherein the second semiconductor layer is disposed closer to a light incident side of the stacked solar cell than the first semiconductor layer.
13 . The stacked solar cell of claim 12 , wherein an N layer of the second semiconductor layer comprises amorphous silicon.
14 . The stacked solar cell of claim 13 , further comprising:
a third semiconductor layer formed between the first and second semiconductor layers,
wherein the third semiconductor layer is formed by sequentially stacking a P layer, an I layer and an N layer, and
wherein the I layer and the N layer of the third semiconductor layer comprise amorphous silicon germanium (a-SiGe).
15 . The stacked solar cell of claim 13 , wherein a P layer of the second semiconductor layer comprises boron doped amorphous silicon (a-Si:H) or amorphous silicon carbide (a-SiC:H).
16 . The stacked solar cell of claim 13 , wherein an N layer of the first semiconductor layer comprises micro-crystalline silicon or amorphous silicon.
17 . The stacked solar cell of claim 11 , wherein the I layer of the first semiconductor layer comprises an incubation layer that is adjacent to a top surface of the P layer of the first semiconductor layer.
18 . The stacked solar cell of claim 17 , wherein the incubation layer is generated when growing a thin film.
19 . A stacked solar cell, comprising:
a first semiconductor layer formed by sequentially stacking a positive (P) layer, an intrinsic (I) layer and a negative (N) layer; and
a second semiconductor layer formed by sequentially stacking a P layer, an I layer and an N layer,
wherein the first semiconductor layer is disposed on the second semiconductor layer, and the P layer of the first semiconductor layer that forms an interface with the N layer of the second semiconductor layer comprises amorphous silicon carbide.
20 . The stacked solar cell of claim 19 , wherein the I layer of the first semiconductor layer comprises micro-crystalline silicon.