Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
View Patent ↗A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.
1. A thin film transistor comprising:
a polycrystalline silicon film in a channel region in which a main orientation of the polycrystalline silicon film is { 110 } with respect to a substrate and a main orientation of the polycrystalline silicon film perpendicular to a direction from a source region to a drain region is { 100 }.
2. The thin film transistor according to claim 1 , further comprising:
a gate electrode formed on the channel region through a gate insulating film.
3. The thin film transistor according to claim 1 , further comprising:
a gate electrode formed below the channel region through a gate insulating film.
4. A thin film transistor comprising:
a polycrystalline semiconductor film in a channel region in which a main orientation of the polycrystalline semiconductor film is { 110 } with respect to a substrate and a main orientation of the polycrystalline semiconductor film perpendicular to a direction from a source region to a drain region is { 100 }.
5. The thin film transistor accordingly to claim 4 , further comprising:
a gate electrode formed on the channel region through a gate insulating film.
6. The thin film transistor accordingly to claim 4 , further comprising:
a gate electrode formed below the channel region through a gate insulating film.