Method for manufacturing semiconductor device, and semiconductor device
A semiconductor device includes a first MISFET having a first conduction type channel and formed on a semiconductor substrate; a second MISFET having a second conduction type channel and formed on the semiconductor substrate; a first strain film having a first sign strain that covers a region where the second MISFET is disposed; and a second strain film having a second sign strain that covers a region where the first MISFET is disposed. In the semiconductor device, an edge of the second strain film closer to the second MISFET overlaps with part of the first strain film; and the second strain film at a portion where the second strain film overlaps with the first strain film and at a portion extending from the portion, is thinner than the second strain film at a portion that covers the first MISFET.
1. A semiconductor device, comprising:
a semiconductor substrate;
a first MISFET having a channel of a first conduction type and formed on the semiconductor substrate;
a second MISFET having a channel of a second conduction type that is opposite to the first conduction type and formed on the semiconductor substrate;
an isolation region between the first MISFET and the second MISFET;
a first film having a first strain, the first film covering a region where the second MISFET is disposed but not a region where the first MISFET is disposed;
a second film having a second strain whose type is opposite to a type of the first strain, the second film covering the region where the first MISFET is disposed but not the region where the second MISFET is disposed; and
an interlayer insulating film disposed on the first film and the second film; and
a conductive plug extending through the interlayer insulating film over the isolation region;
wherein the second film includes a first portion which has a first thickness, a second portion which is provided over the isolation region at a side closer to the second MISFET and has a second thickness being thinner than the first thickness, and a third portion which is provided over the first film and the isolation region,
wherein the first film includes a fourth portion which has a third thickness being thicker than the second thickness.
2. The semiconductor device according to claim 1 , wherein the second MISFET is an n-channel MISFET and the first strain film has a tensile strain.
3. The semiconductor device according to claim 1 , wherein the second MISFET is a p-channel MISFET and the first strain film has a compressive strain.
4. The semiconductor device according to claim 1 , wherein the conductive plug is provided between the second portion and the third portion.