IP Library Granted Patent US 8,210,027
Granted Patent B2
US 8,210,027 · App. 12/510,433 · Granted Jul 3, 2012

Resonator device for detecting helium

Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
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Quick Facts
Patent No.
US 8,210,027
App. No.
12/510,433
Granted
Jul 3, 2012
Kind
B2
Abstract

A device for detecting helium in ambient atmosphere includes a resonator and a frequency detector. The resonator includes a piezoelectric film layer configured to absorb helium atoms. The frequency detector configured to detect a change in resonant frequency of the resonator when helium is absorbed into the piezoelectric film layer from the ambient atmosphere.

Claims (32)

1. A device for detecting helium in ambient atmosphere, the device comprising:

a resonator comprising a piezoelectric film layer configured to absorb helium atoms wherein the piezoelectric layer comprises a crystal lattice having interstitial spaces arranged substantially open to a planar surface of the piezoelectric film layer; and

a frequency detector configured to detect a change in resonant frequency of the resonator when helium is absorbed into the piezoelectric film layer from the ambient atmosphere.

2. The device of claim 1 , wherein the piezoelectric layer comprises aluminum nitride.

3. The device of claim 1 , wherein the interstitial spaces capture at least one atom of the helium in the ambient atmosphere.

4. The device of claim 1 , wherein a mass density of the piezoelectric layer increases when the at least one helium atom is captured in the interstitial spaces.

5. The device of claim 1 , wherein the resonator further comprises first and second electrodes positioned on opposite surfaces of the piezoelectric film layer, the first and second electrodes receiving an electrical excitation signal causing mechanical vibration of the resonator.

6. The device of claim 5 , wherein the first and second electrodes output an electrical output signal corresponding to the mechanical vibration, indicating whether the resonator is operating at the resonant frequency.

7. The device of claim 6 , wherein the first electrode defines a first exposed portion on a first surface of the piezoelectric layer and the second electrode defines a second exposed portion on a second surface of the piezoelectric layer, the piezoelectric film layer absorbing the helium atoms through one of the first and second exposed portions.

8. The device of claim 7 , wherein the first and second electrodes comprise annular shapes.

9. A device for detecting helium in ambient atmosphere, the device comprising:

a substrate;

a resonator formed on the substrate, the resonator comprising an aluminum nitride thin film layer between an upper electrode and a lower electrode, a first portion of the aluminum nitride thin film layer being exposed to the ambient atmosphere through a first opening defined by the upper electrode, wherein a crystal lattice structure of the aluminum nitride thin film layer is arranged to capture helium atoms from the ambient atmosphere that come into contact with the exposed first portion of the aluminum nitride thin film layer; and

a frequency detector configured to detect a change in resonant frequency of the resonator when the helium atoms are captured in the crystal lattice structure of the aluminum nitride thin film layer.

10. The device of claim 9 , further comprising:

a cap connected to the substrate to enclose at least a portion of the aluminum nitride thin film layer, the cap defining a cap opening above at least a portion of the first opening for exposing the first portion of the aluminum nitride thin film layer to the ambient atmosphere.

11. The device of claim 10 , further comprising:

mesh covering the cap opening for protecting the exposed first portion of the aluminum nitride.

12. The device of claim 9 , wherein the frequency detector detects the change in resonant frequency by identifying a shifted resonant frequency when the helium atoms are captured in the crystal lattice structure of the aluminum nitride thin film layer.

13. The device of claim 9 , wherein the frequency detector detects the change in resonant frequency by identifying reduction in an amplitude peak at the resonant frequency when the helium atoms are captured in the crystal lattice structure of the aluminum nitride thin film layer.

14. The device of claim 9 , wherein the frequency detector detects a second change in the resonant frequency when the helium atoms are released by the crystal lattice structure of the aluminum nitride thin film layer, indicating an absence of helium atoms.

15. The device of claim 9 , further comprising:

a signal generator configured to provide an excitation input signal to one of the upper electrode and the lower electrode, initially causing vibration of the aluminum nitride thin film layer at the resonant frequency.

16. The device of claim 9 , wherein a second portion of the aluminum nitride thin film layer is exposed to the ambient atmosphere through a second opening defined by the lower electrode.

17. The device of claim 16 , wherein the substrate defines a substrate opening below at least a portion of the second opening for exposing the second portion of the aluminum nitride thin film layer to the ambient atmosphere through the substrate opening.

18. A system for detecting leaks from an object using helium, the system comprising:

a plurality of helium detecting devices according to claim 9 , arranged in addressable positions in proximity to the object, wherein respective resonant frequencies of resonators of the helium detecting devices change when helium atoms are captured in crystal lattice structures of corresponding aluminum nitride thin film layers; and

a processor configured to detect a change in the resonant frequency of at least one of the resonators and identifying a location of a leak of helium from the object based on the addressable position of the helium detecting device corresponding to the at least one of the resonators.

19. A system for detecting helium in ambient atmosphere, the system comprising:

array comprising plurality of resonators, each resonator comprising an aluminum nitride thin film layer between an upper electrode and a lower electrode, a first portion of the aluminum nitride thin film layer being exposed to the ambient atmosphere through a first opening defined by the upper electrode, wherein a crystal lattice structure of the aluminum nitride thin film layer is arranged to capture helium atoms from the ambient atmosphere that come into contact with the exposed first portion of the aluminum nitride thin film layer;

a frequency detector configured to detect a change in a resonant frequency of at least one resonator of the plurality of resonators when the helium atoms are captured in the crystal lattice structure of the corresponding aluminum nitride thin film layer of the at least one resonator; and

a controller configured to determine a location of the helium atoms by identifying the at least one resonator having the change in the resonant frequency.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE OF MERGER TO 09/05/2018 PREVIOUSLY RECORDED AT REEL: 047230 FRAME: 0133. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Oct 29, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047630/0456 →
MERGER Recorded Oct 4, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047230/0133 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
MERGER Recorded May 7, 2013
From: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 030369/0703 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2009
From: GOEL, ATUL
To: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
Reel/Frame 023018/0335 →
Continuity (1)
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