PIXEL CIRCUIT SUBSTRATE, LIQUID CRYSTAL DISPLAY APPARATUS, METHOD OF MANUFACTURING THE SAME AND PROJECTION DISPLAY APPARATUS
A pixel circuit substrate includes a first interlayer insulating film which is made of an inorganic material at least in a source and drain regions of a thin film transistor. A contact hole is formed in an area above the source and drain regions of a thin film transistor in the first interlayer insulating film. A wiring layer is formed on the first interlayer insulating film, extends to an inner wall and a bottom surface of the contact hole. On a top surface of the wiring layer is formed a recess reflecting the shape of a contact hole. A second interlayer insulating film is formed on the wiring layer, embedded in the recess and has a flat top surface in an area above the thin film transistor. A storage capacitor on the second interlayer insulating film is disposed in the area above the thin film transistor.
1 . A method of manufacturing a liquid crystal display apparatus comprising steps of:
fabricating a pixel circuit substrate;
fabricating a counter substrate; and
connecting said pixel circuit substrate and said counter substrate together so as to be opposite to each other and disposing a liquid crystal layer between said pixel circuit substrate and said counter substrate,
wherein the step of fabricating a pixel circuit substrate comprises the steps of:
forming a thin film transistor formed on said substrate,
forming a first interlayer insulating film which is made of an inorganic material at least in source and drain regions of said thin film transistor,
forming a contact hole in an area of said first interlayer insulating film immediately above said source and drain regions of said thin film transistor,
forming a wiring layer on said first interlayer insulating film in such a manner as to extend to an inner wall and a bottom surface of said contact hole, said wiring layer being connected to said source and drain regions,
forming a silicon oxide film by an O 3 -alkoxysilane reaction by a CVD method thereby to embed an interior of a recess which is formed on a top surface of said wiring layer, the silicon oxide film reflecting the shape of said contact hole and forming a second interlayer insulating film in such a manner as to be disposed on said first interlayer insulating film, and
forming a storage capacitor in the area of said second interlayer insulating film immediately above said thin film transistor.
2 . A method of manufacturing a liquid crystal display apparatus comprising:
fabricating a pixel circuit substrate;
fabricating a counter substrate; and
connecting said pixel circuit substrate and said counter substrate together so as to he opposite to each other and disposing a liquid crystal layer between said pixel circuit substrate and said counter substrate,
wherein the step of fabricating a pixel circuit substrate comprises:
forming a thin film transistor formed on said substrate,
forming a first interlayer insulating film which is made of an inorganic material at least in source and drain regions of said thin film transistor,
forming a contact hole in an area of said first interlayer insulating film immediately above said source and drain regions of said thin film transistor,
forming a wiring layer on said first interlayer insulating film in such a manner as to extend to an inner wall and a bottom surface of said contact hole, and in such a manner that said wiring layer is connected to said source and drain regions,
forming a silicon oxide film by an O 3 -hexamethyldisiloxane reaction by a CVD method thereby to embed an interior of a recess which is formed on a top surface of said wiring layer and so that the silicon oxide film reflects a shape of said contact hole, and forming a second interlayer insulating film in such a manner as to be disposed on said first Interlayer insulating film, and
forming a storage capacitor in the area of said second interlayer insulating film immediately above said thin film transistor.
3 . The method of manufacturing a liquid crystal display apparatus according to claim 1 , wherein in said step of forming of a second interlayer insulating film, as the CVD method a normal pressure CVD method is used and the O 3 concentration in O 2 is in a range of 100 to 200 g/m 3 .
4 . The method of manufacturing a liquid crystal display apparatus according to claim 2 , wherein in said step of forming of a second interlayer insulating film, as the CVD method a normal pressure CVD method is used and the O 3 concentration in O 2 is in a range of 100 to 200 g/m 3 .
5 . The method of manufacturing a liquid crystal display apparatus according to claim 3 , further comprising a step of forming another silicon film by an O 3 -alkoxysilane reaction by a normal pressure CVD method in which the O 3 concentration in O 2 is in a range of 5 to 20 g/m 3 before the formation of said second interlayer insulating film.
6 . The method of manufacturing a liquid crystal display apparatus according to claim 4 , further comprising a step of forming another silicon film by an O 3 -alkoxysilane reaction by a normal pressure CVD method in which the O 3 concentration in O 2 is in a range of 5 to 20 g/m 3 before the formation of said second interlayer insulating film.
7 . The method of manufacturing a liquid crystal display apparatus according to claim 1 , further comprising a step of polishing a top surface of a portion of said second interlayer insulating film corresponding to the area immediately above said thin film transistor between said step of forming a second interlayer insulating film and said step of forming a storage capacitor.
8 . The method of manufacturing a liquid crystal display apparatus according to claim 2 , further comprising a step of polishing a top surface of a portion of said second interlayer insulating film corresponding to the area immediately above said thin film transistor between said step of forming a second interlayer insulating film and said step of forming a storage capacitor.
9 . The method of manufacturing a liquid crystal display apparatus according to claim 1 , wherein when the unit area of each pixel is denoted by X and a total value of an effective area of a contact hole in each pixel is denoted by Y, the value of the ratio (Y/X) is equal to or more than 0.01.
10 . The method of manufacturing a liquid crystal display apparatus according to claim 2 , wherein when the unit area of each pixel is denoted by X and a total value of an effective area of a contact hole in each pixel is denoted by Y, the value of the ratio (Y/X) is equal to or more than 0.01.