Semiconductor device and method for manufacturing the same
In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.
1. A semiconductor device, comprising:
an element region including a wiring structure in a low dielectric constant insulating film; and
a pad region electrically connecting said element region and the outside, in which the low dielectric constant insulating film is formed in association with in said element region,
wherein an occupied density of a plurality of first connection holes formed in the low dielectric constant insulating film in said pad region is higher than an occupied density of a second connection hole in any of portions of the wiring structure in said element region,
wherein a Young's modulus of the low dielectric constant insulating film is 20 GPa and below,
wherein the plurality of first connection holes are formed in such a manner to be distributed substantially evenly in said pad region,
wherein a wiring electrically connecting said element region and the outside is formed above the low dielectric constant insulating film in said pad region,
wherein the first connection hole is enclosed by and directly connected to the wiring,
wherein the first connection hole is formed of a plurality of concentric trench shaped connection holes, the trench shaped connection holes are rectangular shaped at the top point of view, and
at least one concentric trench shaped connection hole of the plurality of concentric trench shaped connection holes encloses remaining concentric trench shaped holes of the plurality of concentric trench shaped connection holes in plan view.
2. The semiconductor device according to claim 1 , wherein the first connection hole is formed in an arbitrary portion of the low dielectric constant insulating film.
3. The semiconductor device according to claim 1 , wherein the number of the first connection holes is larger than the number of the second connection holes in a given area.
4. A semiconductor device, comprising:
an element region including a wiring structure in a low dielectric constant insulating film; and
a pad region electrically connecting said element region and the outside, in which the low dielectric constant insulating film is formed in association with in said element region,
wherein an occupied density of a plurality of first connection holes formed in the low dielectric constant insulating film in said pad region is higher than an occupied density of a second connection hole in any of portions of the wiring structure in said element region,
wherein a Young's modulus of the low dielectric constant insulating film is 20 GPa and below,
wherein the plurality of first connection holes are formed in such a manner to be distributed substantially evenly in said pad region,
wherein said pad region includes a multilayer wiring structure formed in association with in said element region, and
wherein the multilayer wiring structure in said pad region includes a group of wiring structures penetrating multiple layers of a corner of said pad region and the group of wiring structures is formed by connecting a plurality of wiring structure composed of a wiring and a first connection hole of said plurality of first connection holes being connected to each other.
5. The semiconductor device according to claim 4 , wherein the first connection hole is formed in an arbitrary portion of the low dielectric constant insulating film.
6. The semiconductor device according to claim 4 , wherein the number of the first connection holes is larger than the number of the second connection holes in a given area.
7. A semiconductor device, comprising:
an element region including a wiring structure in a low dielectric constant insulating film; and
a pad region electrically connecting said element region and the outside, in which the low dielectric constant insulating film is formed in association with in said element region,
wherein an occupied density of a plurality of first connection holes formed in the low dielectric constant insulating film in said pad region is higher than an occupied density of a second connection hole in any of portions of the wiring structure in said element region,
wherein a Young's modulus of the low dielectric constant insulating film is 20 GPa and below,
wherein the plurality of first connection holes are formed in such a manner to be distributed substantially evenly in said pad region,
wherein a hole width direction cross-sectional area of the first connection hole is larger than a hole width direction cross-sectional area of the second connection hole, with uniformity, and
the first connection hole and the second connection hole are electrically connected in a physically non-contact state and are formed in a same layer in said pad region.
8. The semiconductor device according to claim 7 , wherein the first connection hole is formed in an arbitrary portion of the low dielectric constant insulating film.
9. The semiconductor device according to claim 7 , wherein the number of the first connection holes is larger than the number of the second connection holes in a given area.
10. A semiconductor device, comprising:
an element region including a wiring structure in a low dielectric constant insulating film; and
a pad region electrically connecting said element region and the outside, in which the low dielectric constant insulating film is formed in association with in said element region,
wherein an occupied density of a plurality of first connection holes formed in the low dielectric constant insulating film in said pad region is higher than an occupied density of a second connection hole in any of portions of the wiring structure in said element region,
wherein a Young's modulus of the low dielectric constant insulating film is 20 GPa and below,
wherein the plurality of first connection holes are formed in such a manner to be distributed substantially evenly in said pad region, the first connection hole being formed to be trench shaped at the top point of view,
wherein a wiring electrically connecting said element region and the outside is formed above the low dielectric constant insulating film in said pad region, and
the first connection hole and the second connection hole are formed in a same layer in the low dielectric constant insulating film.
11. The semiconductor device according to claim 10 , wherein the first connection hole is formed in an arbitrary portion of the low dielectric constant insulating film.
12. The semiconductor device according to claim 10 , wherein the number of the first connection holes is larger than the number of the second connection holes in a given area.
13. The semiconductor device according to claim 10 , wherein the first connection hole is formed as a part of a wiring structure connected to a surface of a semiconductor substrate.
14. The semiconductor device according to claim 10 , wherein a multilayer wiring structure including the first connection hole is formed in said pad region.