Semiconductor device including capacitor element and method of manufacturing the same
View Patent ↗A semiconductor device includes a substrate, an insulating film formed over the substrate, first and second conductive plugs formed in the insulating film, a capacitor element, and a wiring. The capacitor element includes a lower electrode, a dielectric film, and an upper electrode. The lower electrode is connected to an end of the first plug and formed on the insulating film, and includes a first barrier film. The dielectric film is formed on upper and side surfaces of the lower electrode. The upper electrode is formed on the dielectric film, and includes a second barrier metal film being wider than the lower electrode. The wiring is connected to an end of the second plug and formed on the insulating film, and includes a first layer and a second layer formed on the first layer. The first and second layers include the first and second barrier metal films, respectively.
1. A semiconductor device, comprising:
a semiconductor substrate;
an insulating film formed over the semiconductor substrate;
a first conductive plug formed in the insulating film;
a second conductive plug formed in the insulating film;
a capacitor element comprising a capacitor lower electrode connected to one end of the first conductive plug and formed on the insulating film, a dielectric film formed on an upper surface and side surfaces of the capacitor lower electrode, and a capacitor upper electrode formed on the dielectric film, the capacitor lower electrode comprising a first barrier film, the capacitor upper electrode comprising a second barrier metal film that is wider than the capacitor lower electrode;
a wiring connected to one end of the second conductive plug and formed on the insulating film, the wiring comprising a first layer and a second layer formed on the first layer, the first layer comprising the first barrier metal film, the second layer comprising the second barrier metal film;
a fuse formed in the insulating film off to a side of the capacitor element; and
a protection pattern that covers at least a port of the fuse, the protection pattern comprising a conductive film that is same as that of the capacitor lower electrode.
2. A semiconductor device according to claim 1 , wherein an outer periphery of the capacitor upper electrode extends toward outside of an outer periphery of the dielectric film.
3. A semiconductor device according to claim 1 , further comprising:
a conductive protection film formed on an upper surface of the dielectric film and having upper surface and side surfaces joined to a lower surface of the capacitor upper electrode.
4. A semiconductor device according to claim 1 , further comprising:
a sidewall formed on a side surface of the capacitor lower electrode and having an outward and downward sloping surface.
5. A semiconductor device according to claim 1 , wherein the second barrier metal film has an adhesive film formed on a surface of the insulating film.
6. A semiconductor device according to claim 1 , further comprising:
a third conductive plug formed in the insulating film off to a side of the capacitor element; and
a metal pattern that covers the third conductive plug metal pattern, the metal pattern comprising the second metal film of the capacitor upper electrode.
7. A semiconductor device according to claim 1 , further comprising:
a multi-layer metal pattern, a part of which is formed in the insulating film, wherein other parts of the multi-layer metal pattern are formed successively on and under the insulating film respectively, and one of the other parts of the multilayer metal pattern comprises at least one of the first barrier metal film and the second barrier metal film.
8. A semiconductor device, comprising:
a semiconductor substrate;
an insulating film formed over the semiconductor substrate;
a first conductive plug formed in the insulating film;
a second conductive plug formed in the insulating film;
a capacitor element comprising a capacitor lower electrode connected to one end of the first conductive plug and formed on the insulating film, a dielectric film formed on an upper surface and side surfaces of the capacitor lower electrode, and a capacitor upper electrode formed on the dielectric film, the capacitor lower electrode comprising a first barrier film, the capacitor upper electrode comprising a second barrier metal film that is wider than the capacitor lower electrode;
a wiring connected to one end of the second conductive plug and formed on the insulating film, the wiring comprising a first layer and a second layer formed on the first layer, the first layer comprising the first barrier metal film, the second layer comprising the second barrier metal film; and
a main conductive film formed over the second barrier metal film.