Liquid crystal display device
View Patent ↗A display device includes a substrate, a gate line formed over the substrate, a first insulating film formed over the substrate and the gate line, a semiconductor film formed over the first insulating film, a drain electrode formed over the semiconductor film, a source electrode formed over the semiconductor film, a data line connected to the drain electrode and formed over the first insulating film, a second insulating film formed over the source electrode and the data line, a pixel electrode electrically connected to the source electrode and formed over the second insulating film, and a transparent conductive film connected to the data line through a contact hole formed in the second insulating film. The transparent conductive film includes a first portion which none of the first insulating film and the second insulating film underlie.
1. A display device comprising:
a substrate;
a plurality of gate lines formed over the substrate;
a first insulating film formed over the substrate and the plurality of gate lines;
a plurality of data lines formed over the first insulating film, each of the plurality of data lines being formed of a first electrically conductive film;
a plurality of thin film transistors, each of the plurality of thin film transistors having a semiconductor layer comprising an i-type semiconductor and an impurity doped semiconductor laminated over the first insulating film, a first electrode formed over the semiconductor layer, and a second electrode formed by a part of a corresponding one of the plurality of data lines;
a second insulating film formed over the plurality of data lines and the plurality of thin film transistors;
a plurality of pixel electrodes formed over the second insulating film, each of the plurality of pixel electrodes comprising a second electrically conductive film and being coupled to the first electrode of a corresponding one of the plurality of thin film transistors via a first opening formed in the second insulating film;
a plurality of transparent conductive films, each of the plurality of transparent conductive films comprising the second electrically conductive film and being coupled to a corresponding one of the plurality of data lines via a second opening formed in the second insulating film;
wherein each of the plurality of transparent conductive films, extending from the second opening, includes a first portion;
wherein none of the first insulating film and the second insulating film exist between the substrate and the first portion; and
wherein, in a cross section of an end portion of the first electrode in a direction of a length of a channel of the plurality of thin film transistors, the impurity doped semiconductor is configured to extend a minimum distance of 0.2 μm beyond the first electrode in the direction of a length of a channel of the plurality of thin film transistors in order to prevent overhang of the first electrode beyond the impurity doped semiconductor, and the i-type semiconductor is configured to extend beyond the impurity doped semiconductor in the direction of a length of a channel of the plurality of thin film transistors.
2. A display device according to claim 1 , wherein the second electrically conductive film is comprised of an oxide.
3. A display device according to claim 1 , wherein the second electrically conductive film is comprised of indium-tin-oxide and overlaps an end portion of the first electrode.
4. A display device according to claim 1 , wherein the i-type semiconductor and the impurity-doped semiconductor are in contact with each other in the neighborhood of a channel region of the thin film transistor.
5. A display device according to claim 1 , wherein, in a cross section of an end portion of the first electrode in a direction of a length of a channel of the plurality of thin film transistors, the impurity-doped semiconductor is configured to extend a distance of 0.2 μm to 0.7 μm beyond the first electrode in the direction of the length of a channel of the plurality of thin film transistors.
6. A display device comprising:
a substrate;
a plurality of gate lines formed over the substrate;
a first insulating film formed over the substrate and the plurality of gate lines;
a plurality of data lines formed over the first insulating film, each of the plurality of data lines being formed of a first electrically conductive film;
a plurality of thin film transistors, each of the plurality of thin film transistors having a semiconductor layer comprising an i-type semiconductor and an impurity doped semiconductor laminated over the first insulating film, a first electrode formed over the semiconductor layer, and a second electrode formed by a part of a corresponding one of the plurality of data lines;
a second insulating film formed over the plurality of data lines and the plurality of thin film transistors;
a plurality of pixel electrodes formed over the second insulating film, each of the plurality of pixel electrodes comprising a second electrically conductive film and being coupled to the first electrode of a corresponding one of the plurality of thin film transistors via a first opening formed in the second insulating film;
a plurality of transparent conductive films, each of the plurality of transparent conductive films comprising the second electrically conductive film and being coupled to a corresponding one of the plurality of data lines via second opening formed in the second insulating film;
wherein each of the plurality of transparent conductive films, extending from the second opening, has a portion thereof directly on the substrate; and
wherein, in a cross section of an end portion of the first electrode in a direction of a length of a channel of the plurality of thin film transistors, the impurity-doped semiconductor is configured to extend a minimum distance of 0.2 μm beyond the first electrode in the direction of a length of a channel of the plurality of thin film transistors in order to prevent overhang of the first electrode beyond the impurity doped semiconductor, and the i-type semiconductor is configured to extend beyond the impurity doped semiconductor in the direction of a length of a channel of the plurality of thin film transistors.
7. A display device according to claim 6 , wherein the second electrically conductive film is comprised of an oxide.
8. A display device according to claim 6 , wherein the second electrically conductive film is comprised of indium-tin-oxide and overlaps an end portion of the first electrode.
9. A display device according to claim 6 , wherein the i-type semiconductor and the impurity-doped semiconductor are in contact with each other in the neighborhood of a channel region of the thin film transistor.
10. A display device according to claim 6 , wherein, in a cross section of an end portion of the first electrode in a direction of a length of a channel of the plurality of thin film transistors, the impurity-doped semiconductor is configured to extend a distance of 0.2 μm to 0.7 μm beyond the first electrode in the direction of the length of a channel of the plurality of thin film transistors.