Semiconductor device and manufacturing method of the same

1. A manufacturing method of a semiconductor device, comprising the steps of:

forming a ferroelectric capacitor above a semiconductor substrate;

forming an interlayer insulating film covering the ferroelectric capacitor;

forming a hole reaching a top electrode of the ferroelectric capacitor in the interlayer insulating film; and

forming a wiring connected to the top electrode via the hole on the interlayer insulating film,

wherein, in said step of forming the hole, a planar shape of the hole is set to a shape in which lengths of two axes orthogonal to each other are different, and

wherein a direction in which a major axis of the hole is extending is set to a direction corresponding to a direction in which a long side of the top electrode is extending.

2. The manufacturing method of a semiconductor device according to claim 1 , wherein the planar shape of the hole is set to an ellipse.

3. The manufacturing method of a semiconductor device according to claim 1 , wherein the planar shape of the hole is set to a rectangle.

4. The manufacturing method of a semiconductor device according to claim 1 , wherein the planar shape of the hole is set to a shape in which four corners of a rectangle are rounded off

5. The manufacturing method of a semiconductor device according to claim 1 , wherein said step of forming the ferroelectric capacitor includes the step of forming a ferroelectric film containing Pb, Zr, and Ti, and a conductive film containing Ir is formed as the top electrode.

6. The manufacturing method of a semiconductor device according to claim 1 , wherein both lengths of the major axis and minor axis of the hole are set to ranges of respective displacement margins which are set for a top electrode.