Etched-facet ridge lasers with etch-stop
View Patent ↗A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
1. A process for fabricating a photonic device, comprising:
forming on a substrate an epitaxial semiconductor structure incorporating an active layer;
forming a wet etch stop layer in said epitaxial structure above said active layer;
dry etching said epitaxial structure to form a laser having at least one facet;
dry etching said epitaxial structure to partially form a ridge for said laser;
wet etching said epitaxial structure to complete the formation of said ridge;
covering said laser and said facet with a protective conformal layer;
opening a contact window in said protective conformal layer; and
depositing a metal layer to cover said window and to electrically contact said laser.
2. The process of claim 1 , wherein forming an epitaxial structure further includes:
depositing a lower cladding layer on said substrate beneath said active layer; and
depositing an upper cladding layer on said active layer, wherein said wet etch stop layer is incorporated in said upper cladding layer.
3. The process of claim 2 , wherein forming said epitaxial structure further includes depositing a contact layer on said upper cladding layer.
4. The process of claim 2 , wherein forming said wet etch stop layer includes:
partially depositing said upper cladding layer on said active region;
depositing said wet etch stop layer; and
thereafter depositing the remainder of said upper cladding layer on said wet etch region.
5. The process of claim 1 , wherein the step of wet etching said structure includes forming said ridge to be shorter at or near said facet than away from said facet.
6. The process of claim 1 , wherein said etch stop layer is GaInAsP.
7. The process of claim 1 , wherein said substrate is InP.
8. The process of claim 1 , wherein said laser is selected from the group comprising an edge emitting laser and a surface emitting laser.
9. The process of claim 1 , wherein said step of dry etching said epitaxial structure to form a laser having at least one facet further comprises dry etching said epitaxial structure to form a laser having at least first and second etched facets.
10. The process of claim 9 , wherein said laser is selected from the group comprising an edge emitting laser and a surface emitting laser.
11. The process of claim 10 , wherein said etch stop layer is GaInAsP.
12. The process of claim 11 , wherein said substrate is InP.