Method for evaluating impurity distribution under gate electrode without damaging silicon substrate
View Patent ↗A method of manufacturing a semiconductor device forms the semiconductor device in a device region of a semiconductor substrate simultaneously with forming a monitor semiconductor device that includes a gate electrode made of silicon containing material arranged on a gate insulating film in a monitor region of the semiconductor substrate, a source electrode and a drain electrode formed on the semiconductor substrate on corresponding sides of the gate electrode. The gate electrode is removed without removing a gate insulating film by applying pyrolysis hydrogen generated by pyrolysis on the monitor semiconductor device in the monitor region, and the gate insulating film is removed by a wet process. Impurities distribution of a silicon active region appearing after the gate electrode is removed is measured and fed back to a semiconductor manufacturing process.
1. A manufacturing method of a semiconductor device, comprising:
forming a semiconductor device in a device region of a semiconductor substrate simultaneously with forming a monitor semiconductor device that includes a gate electrode made of silicon containing material arranged on a gate insulating film in a monitor region of the semiconductor substrate, a source electrode and a drain electrode formed on the semiconductor substrate on corresponding sides of the gate electrode, and a sidewall insulating film formed on a sidewall of the gate electrode;
removing at least a part of the sidewall insulating film on the sidewall of the gate electrode on the monitor semiconductor device in the monitor region;
removing the gate electrode without removing the gate insulating film by applying pyrolysis hydrogen generated by pyrolysis on the monitor semiconductor device in the monitor region;
removing the gate insulating film on the monitor semiconductor device in the monitor region by a wet process;
measuring impurities distribution of a silicon active region appeared after the gate electrode is removed; and
feeding back a measurement result of the measuring to a semiconductor manufacturing process.
2. The manufacturing method of the semiconductor device as claimed in claim 1 , further comprising:
adjusting at least one of processing conditions of the gate electrode, impurities injecting conditions, and heat treatment conditions for impurity diffusion when the measurement result does not fulfill predetermined conditions.
3. The manufacturing method of the semiconductor device as claimed in claim 1 , further comprising:
continuing the semiconductor manufacturing process of the semiconductor substrate for completing a semiconductor wafer when the measurement result fulfills predetermined conditions.
4. The manufacturing method of the semiconductor device as claimed in claim 1 , wherein the monitor region is provided in one of a chip region of the semiconductor substrate and a scribe region that divides the chip region.
5. The manufacturing method of the semiconductor device as claimed in claim 1 , wherein the gate electrode made of the silicon containing material is one of a dummy gate electrode for a damascene gate and a gate electrode of LDMOS (Lateral Double Diffused MOSFET).
6. The manufacturing method of the semiconductor device as claimed in claim 1 , wherein the pyrolysis hydrogen is generated by contacting hydrogen gas to a metal catalyst heated at about 1800° C.
7. The manufacturing method of the semiconductor device as claimed in claim 1 , wherein the measuring includes observing a form of the sidewall insulating film on the sidewall of the gate electrode on the monitor semiconductor device after the removing at least a part of the sidewall insulating film.
8. The manufacturing method of the semiconductor device as claimed in claim 1 , wherein the removing at least a part of the sidewall insulating film removes, in its entirety, the sidewall insulating film on the sidewall of the gate electrode on the monitor semiconductor device by a dry etching.