Semiconductor device and method for manufacturing the same

1. A method for manufacturing a semiconductor device comprising:

forming a lower electrode film above a semiconductor substrate;

forming a ferroelectric film on the lower electrode film; and

forming an upper electrode on the ferroelectric film, wherein said upper electrode forming process includes a process of forming a conductive oxide film that is crystallized when formed at a lower layer of said upper electrode, and a conductive film on said conductive oxide film,

wherein an orientation intensity to a (200) plane is higher than an orientation intensity to a (110) plane in said conductive oxide film, and

wherein an average diameter of grains in said conductive oxide film is smaller than in said conductive film.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein said conductive oxide film forming process includes a process of conducting a sputtering using a target containing at least one kind of metal element selected from a group composed of platinum, iridium, ruthenium, rhodium, rhenium, osmium, and palladium, under a condition that the metal element is caused to be oxidized.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein, in said conductive oxide film forming process, the orientation of the conductive oxide film is controlled by controlling a temperature.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein, in said conductive oxide film forming process, the orientation of the conductive oxide film is controlled by controlling a partial pressure of oxygen in a sputtering gas.

5. The method for manufacturing a semiconductor device according to claim 2 , wherein one including iridium is used as the target.

6. The method for manufacturing a semiconductor device according to claim 5 , wherein, in said conductive oxide film forming process, the temperature is from 20° C. to 400° C.

7. The method for manufacturing a semiconductor device according to claim 6 , wherein the temperature is 300° C.

8. The method for manufacturing a semiconductor device according to claim 6 , wherein, in said conductive oxide film forming process, the partial pressure of the oxygen gas with respect to a pressure of oxygen gas and inert gas both composing the sputtering gas is 10% to 60%.

9. The method for manufacturing a semiconductor device according to claim 1 , wherein, as the conductive film, a metal film containing at least one kind of metal element selected from the group composed of platinum, iridium, ruthenium, rhodium, rhenium, osmium, and palladium is formed.

10. The method for manufacturing a semiconductor device according to claim 1 , wherein, as the conductive film, a conductive oxide film containing at least one kind of metal element selected from the group composed of platinum, iridium, ruthenium, rhodium, rhenium, osmium, and palladium is formed.

11. The method for manufacturing a semiconductor device according to claim 10 , wherein, as the conductive film, a SrRuO 3 film is formed.

12. The method for manufacturing a semiconductor device according to claim 1 , wherein, as the conductive film, a film configured to have two or more layers is formed.

13. The method for manufacturing a semiconductor device according to claim 1 , wherein, as the ferroelectric film, a film of a crystal structure to be caused to have a bismuth-layer structure or a perovskite structure by thermal treatment is formed.

14. The method for manufacturing a semiconductor device according to claim 1 , wherein the ferroelectric film is formed by a sol-gel method, a metallo-organic deposition method, a chemical solution deposition method, a chemical vapor deposition method, an epitaxial growth method, a sputtering method, or a MOCVD method.