IP Library Granted Patent US 8,256,093
Granted Patent B2
US 8,256,093 · App. 12/685,154 · Granted Sep 4, 2012

Method of manufacturing an acoustic mirror

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Quick Facts
Patent No.
US 8,256,093
App. No.
12/685,154
Granted
Sep 4, 2012
Kind
B2
Abstract

An acoustic mirror of alternately arranged layers of high and low acoustic impedances is manufactured in that a basic material having a first layer of the layer sequence is initially provided, on which a second layer of the layer sequence is created on the first layer such that the second layer of the layer sequence partially covers the first layer. Subsequently, a planarization layer is applied onto the layer sequence, and the planarization layer is removed in an area which in the common layer plane projects laterally beyond the second layer so as to result in a residual planarization layer. Finally, a termination layer is applied onto the layer sequence and the residual planarization layer.

Claims (23)

1. A method of manufacturing an acoustic mirror, the method comprising:

(a) providing a basic material having an etch stop layer;

(b) creating a first metal layer which partially covers the etch stop layer;

(c) creating a first dielectric layer on the first metal layer;

(d) creating a second metal layer on the first dielectric layer;

(e) applying a planarization layer on the second metal layer and the etch stop layer;

(f) removing the portion of the planarization layer which projects outward beyond a plane defined by the second metal layer such that a residual planarization layer results, wherein the residual planarization layer comprises a pit; and

(g) applying a termination layer of a non-metallic material onto the second metal layer, the termination layer covering at least part of the residual planarization layer.

2. The method of claim 1 , wherein in step (e), the planarization layer is applied with a layer thickness at least as thick as the first metal layer, the dielectric layer, and the second metal layer.

3. The method of claim 1 , wherein steps (b), (c) and (d) comprise the following sub-steps: applying a first metal layer material; applying a dielectric layer material; applying a second metal layer material such that a layer sequence comprising three layers forms; and structuring the layer sequence.

4. The method of claim 3 wherein the step of structuring comprises an etching process.

5. The method of claim 1 wherein the acoustic mirror includes a plurality of metal layers and a plurality of dielectric layers, the method including repeating steps (c) to (f) for each layer pair comprising one of the metal layers and one of the dielectric layers.

6. The method of claim 5 wherein steps (c) and (d) comprise the following sub-steps: applying layer materials for each layer pair; and structuring the layer materials for each layer pair.

7. The method of claim 6 wherein the step of structuring the layer materials comprises a dry etching process.

8. The method of claim 7 wherein the step of structuring the layer materials includes using a mask.

9. The method of claim 1 wherein the step of removing the planarization layer comprises an etching process.

10. The method of claim 1 wherein the first dielectric layer is an oxide layer and wherein the first metal layer and the second metal layer are tungsten layers.

11. A method of manufacturing an acoustic mirror, the method comprising:

(a) providing a basic material and providing a first layer of a layer sequence on the basic material;

(b) applying a second layer of the layer sequence on the first layer, the second layer of the layer sequence partially covering the first layer, the first layer and the second layer providing a layer sequence of alternately arranged layers of high acoustic impedance and low acoustic impedance, wherein the first and second layers are arranged substantially in parallel;

(c) applying a planarization layer on the layer sequence;

(d) removing the planarization layer in an area which projects outward beyond the second layer, wherein removal of the planarization layer in the area results in a residual planarization layer, the residual planarization layer arranged substantially parallel to the first and second layers, and the residual planarization layer including at least one pit; and

(e) applying a termination layer on the layer sequence and the residual planarization layer, the termination layer tilling the at least one pit and resulting in a surface arranged substantially parallel to the first and second layers.

Assignments (2)
MERGER Recorded May 7, 2013
From: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 030369/0703 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2010
From: INFINEON TECHNOLOGIES AG
To: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
Reel/Frame 023759/0718 →