Encapsulated active transducer and method of fabricating the same
View Patent ↗A micro-electromechanical systems (MEMS) ultrasonic transducer device includes a substrate defining an opening and an active transducer having multiple of active layers stacked over the opening of the substrate. The active transducer is completely encapsulated by multiple passivation layers.
1. A micro-electromechanical systems (MEMS) ultrasonic transducer device, comprising:
a substrate defining an opening;
a first passivation layer formed on the substrate;
an active transducer comprising a plurality of active layers stacked on the first passivation layer over the opening of the substrate; and
a second passivation layer formed on a top surface of the active transducer and side surfaces of the plurality of active layers through a passivation channel surrounding an outer perimeter of the active transducer, wherein the active transducer is completely encapsulated by the first and second passivation layers.
2. The device of claim 1 , wherein the second passivation layer abuts the first passivation layer through the passivation channel.
3. The device of claim 2 , wherein each of the first and second passivation layers comprises boron silicate glass (BSG).
4. A piezoelectric micro-machined ultrasonic transducer (PMUT) device, comprising:
a first passivation layer formed on a substrate;
a first electrode formed on the first passivation layer;
a piezoelectric layer formed on the first electrode;
a second electrode formed on the piezoelectric layer;
a channel surrounding an active area of the PMUT device, the channel being etched through the first electrode, the piezoelectric layer and the second electrode to the first passivation layer, and exposing corresponding edges of the first electrode, the piezoelectric layer and the second electrode and a portion of the first passivation layer; and
a second passivation layer formed on the second electrode and the channel, the second passivation layer conformally coating the exposed edges of the first electrode, the piezoelectric layer and the second electrode, and the exposed portion of the first passivation layer in the channel to encapsulate the active area of the PMUT device.
5. The device of claim 4 , wherein the first and second passivation layers each comprise boron silicate glass (BSG).
6. The device of claim 4 , wherein the first and second passivation layers each comprise at least one layer of silicon dioxide (SiO 2 ), silicon nitride (SiN) or polysilicon.
7. The device of claim 5 , wherein the first passivation layer has a thickness of about 0.05 μm to about 10 μm, and second passivation layer has a thickness of about 0.05 μm to about 1.0 μm.
8. The device of claim 5 , wherein the piezoelectric layer comprises aluminum nitride (AlN) or zinc oxide (ZnO).
9. The device of claim 8 , wherein the first and second electrodes each comprise molybdenum (Mo) or tungsten (W).
10. The device of claim 4 , wherein the substrate defines an opening to the first passivation layer, the encapsulated active area of the PMUT device being positioned above the opening.
11. A transducer array comprising a plurality of PMUT devices of claim 4 .
12. A micro-electromechanical systems (MEMS) ultrasonic transducer device, comprising:
a first passivation layer formed on a substrate;
an active transducer formed on the first passivation layer, the active transducer comprising a plurality of stacked active layers; and
a second passivation layer formed on the active transducer and in a channel surrounding the active transducer, the second passivation layer contacting the first passivation layer within the channel, such that the first and second passivation layers encapsulate the active transducer.
13. The device of claim 12 , wherein the active transducer comprises a first electrode, a piezoelectric layer and a second electrode stacked over an opening in the substrate.
14. The device of claim 13 , wherein the first and second passivation layers provide protection to side surfaces of the first electrode, the piezoelectric layer and the second electrode of the active transducer.
15. The device of claim 12 , wherein the channel comprises an annular channel around the active transducer.
16. The device of claim 12 , wherein the first passivation layer has a thickness of about 0.05 μm to about 10 μm, and second passivation layers has a thickness of about 0.05 μm to about 1.0 μm.
17. The device of claim 12 , wherein the first and second passivation layers each comprise boron silicate glass (BSG).
18. The device of claim 12 , wherein the first and second passivation layers each comprise at least one layer of silicon dioxide (SiO 2 ), silicon nitride (SiN) or polysilicon.
19. The device of claim 12 , wherein the second passivation layer has a thickness of about 50 Å to about 500 Å.
20. The device of claim 19 , wherein the second passivation layers comprises alumina.