Capacitor fabrication method
View Patent ↗The nitride film forming method comprises the first step of loading a semiconductor substrate 12 into a reaction furnace, and decompressing the inside of the reaction furnace 14 to remove oxygen and water from the inside of the reaction furnace 14 and the semiconductor substrate 12 , the second step of heating the reaction furnace 14 to further remove the oxygen and the water from the reaction furnace 14 and the semiconductor substrate 12 , and the third step of purifying nitrogen gas to have the oxygen concentration to be 1 ppb or below, and performing thermal processing with the purified nitrogen gas being fed into the reaction furnace to form a nitride film 56 over the semiconductor substrate 12 . The thermal nitriding is performed using an ultrahigh-purity nitrogen gas of an oxygen concentration of 1 ppb or below, whereby nitrogen film of very good quality can be formed without setting the thermal processing temperature very high.
1. A capacitor fabrication method comprising:
a first step of forming a lower electrode in or over a semiconductor substrate;
a second step of loading the semiconductor substrate into a reaction furnace, and decompressing the inside of the reaction furnace to remove oxygen and water from the inside of the reaction furnace and the semiconductor substrate;
a third step of heating the reaction furnace to further remove the oxygen and water from the inside of the reaction furnace and the semiconductor substrate;
a fourth step of purifying nitrogen gas to have the oxygen concentration of 1 ppb or below, and performing thermal processing while feeding the purified nitrogen gas into the reaction furnace to form a capacitor dielectric film of a nitride film over the lower electrode; and
a fifth step of forming an upper electrode over the capacitor dielectric film.
2. A capacitor fabrication method according to claim 1 , wherein
in the first step, the lower electrode of an impurity diffused layer is formed in the semiconductor substrate.
3. A capacitor fabrication method according to claim 2 , further comprising, after the first step and before the second step,
a sixth step of forming an oxide film on the lower electrode, and in which
in the fourth step, the oxide film is nitrided to form the capacitor dielectric film of the nitride film.
4. A capacitor fabrication method according to claim 1 , wherein
in the first step, the lower electrode of a semiconductor layer with a dopant impurity implanted in is formed over the semiconductor substrate.
5. A capacitor fabrication method according to claim 4 , which further comprises, after the first step and before the second step,
a sixth step of forming an oxide film over the lower electrode, and in which
in the fourth step, the oxide film is nitrided to form the capacitor dielectric film of the nitride film.