SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A technology is provided which allows a reduction in the size of a semiconductor device without degrading an electromagnetic shielding effect and reliability against reflow heating. After a plurality of components are mounted over a component mounting surface of a module substrate, a resin is formed so as to cover the mounted components. Further, over surfaces (upper and side surfaces) of the resin, a shield layer including a laminated film of a Cu plating film and an Ni plating film is formed. In the shield layer, a plurality of microchannel cracks are formed randomly along grain boundaries and in a net-like configuration without being coupled to each other in a straight line, and form a plurality of paths extending from the resin to a surface of the shield layer by the microchannel cracks.
1 . A semiconductor device comprising:
a module substrate;
a plurality of components mounted over a component mounting surface of the module substrate;
a resin formed so as to cover the plurality of components; and
a shield layer including a metal film formed over a surface of the resin,
wherein a plurality of microchannel cracks are formed in the shield layer.
2 . A semiconductor device according to claim 1 ,
wherein the microchannel cracks in the shield layer are formed randomly along a grain boundary and in a net-like configuration without being connected to each other in a straight line, and form a plurality of paths extending from the surface of the resin to a surface of the shield layer.
3 . A semiconductor device according to claim 1 ,
wherein a width of each of the microchannel cracks ranges from 1 to 60 nm.
4 . A semiconductor device according to claim 1 ,
wherein the shield layer includes a laminated film of a first film which is formed by an electroless plating method and has an electromagnetic shielding function, and a second film which is formed over the first film by an electroless plating method and has an anticorrosive function.
5 . A semiconductor device according to claim 1 ,
wherein the shield layer includes a laminated film of a copper film formed by an electroless plating method and a nickel film formed over the copper film by an electroless plating method.
6 . A semiconductor device according to claim 5 ,
wherein a thickness of the copper film ranges from 2 to 10 μM.
7 . A semiconductor device according to claim 6 ,
wherein a thickness of the nickel film ranges from 0.1 to 0.3 μm.
8 . A semiconductor device according to claim 1 ,
wherein the shield layer includes a laminated film of a copper film formed by an electroless plating method and a tin film, a zinc film, a bismuth film, or a gold film formed over the copper film by an electroless plating method.
9 . A semiconductor device according to claim 1 ,
wherein a part of inner-layer wiring of the module substrate is led out to a side surface of the module substrate, and the part of the inner-layer wiring led out to the side surface of the module substrate is electrically coupled to the shield layer at the side surface of the module substrate.
10 . A semiconductor device according to claim 1 ,
wherein a part of inner-layer wiring electrically coupled to the shield layer is ground wiring.
11 . A semiconductor device according to claim 1 ,
wherein a wiring layer of a part of inner-layer wiring is used for ground wiring, and a major part of the wiring layer of the part of the inner-layer wiring is the ground wiring.
12 . A semiconductor device according to claim 1 , further comprising:
a plurality of electrodes provided at a back surface of the module substrate,
wherein the module substrate is mounted over a main surface of a mother board via the electrodes.
13 . A semiconductor device including an RF power amplification circuit, the semiconductor device comprising:
a module substrate;
a semiconductor chip including a transistor mounted over a main surface of the module substrate, and forming the RF power amplification circuit;
chip components mounted over the main surface of the module substrate, and including a passive element;
a resin formed so as to cover the main surface of the module substrate, the semiconductor chip, and the chip components; and
a shield layer including a metal film formed over a surface of the resin,
wherein a plurality of microchannel cracks are formed in the shield layer.
14 . A semiconductor device according to claim 13 ,
wherein the shield layer includes a laminated film of a copper film and a nickel film formed over the copper film.
15 . A semiconductor device according to claim 14 ,
wherein the copper film and the nickel film are each formed by an electroless plating method.
16 . A semiconductor device according to claim 13 ,
wherein a width of each of the microchannel cracks ranges from 1 to 60 nm.
17 . A semiconductor device according to claim 13 ,
wherein the semiconductor device is mounted in mobile communication equipment.
18 . A manufacturing method of a semiconductor device, comprising the steps of:
(a) preparing a sheet-like first wiring substrate in which a plurality of module regions are arranged in a first direction and in a second direction orthogonal to the first direction;
(b) mounting a plurality of components over a component mounting surface of the first wiring substrate;
(c) molding the mounted components with a resin;
(d) cutting, from above the resin, a part of each of the resin and the first wiring substrate in the first direction and in the second direction to make respective incisions around the individual module regions;
(e) forming, over a surface of the resin and in the incision portions of the first wiring substrate, a shield layer including a laminated film of a first film having an electromagnetic shielding function and a second film having an anticorrosive function by an electroless plating method; and
(f) cutting the first wiring substrate located below the incision portions of the first wiring substrate to divide the first wiring substrate into individual modules.
19 . A manufacturing method of a semiconductor device according to claim 18 ,
wherein the first film is a copper film, and the second film is a nickel film.
20 . A manufacturing method of a semiconductor device according to claim 19 ,
wherein a thickness of the copper film ranges from 2 to 10 μm.
21 . A manufacturing method of a semiconductor device according to claim 19 ,
wherein a thickness of the nickel film ranges from 0.1 to 0.3 μm.
22 . A manufacturing method of a semiconductor device according to claim 18 ,
wherein the first film is a copper film, and the second film includes a laminated film of any two or more of a tin film, a zinc film, a bismuth film, and a gold film.
23 . A manufacturing method of a semiconductor device according to claim 18 , further comprising, after the step (f), the step of:
(g) disposing the modules over a main surface of a mother board via a solder, and then performing reflow heating.
24 . A manufacturing method of a semiconductor device according to claim 23 ,
wherein the reflow heating is performed at a temperature of not less than 250° C.
25 . A manufacturing method of a semiconductor device according to claim 18 ,
wherein, in the step (d), a part of the first wiring substrate is cut such that a part of inner-layer wiring of each of the module regions is exposed at a side surface of the module region, and
wherein, in the step (e), the shield layer is formed so as to be electrically coupled to the part of the inner-layer wiring exposed at the side surface of the module region.
26 . A manufacturing method of a semiconductor device according to claim 25 ,
wherein the part of the inner-layer wiring electrically coupled to the shield layer is ground wiring.