Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors
View Patent ↗A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 1 such that the film exhibits a field effect electron mobility that is greater than 0.005 cm 2 /Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.
1. A process for fabricating a thin film semiconductor device, comprising, not necessarily in the following order, the steps of
(a) depositing, onto a substrate, a thin film of organic semiconductor material that comprises an organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds such that the film exhibits a field effect electron mobility that is greater than 0.005 cm 2 /Vs;
(b) forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by, and electrically connected with, the n-channel semiconductor film; and
(c) forming a gate electrode spaced apart from the semiconductor material,
wherein the organic semiconductor material is a compound represented by one of the following structures:
wherein Ar 1 and Ar 2 are the same or different, and are each carbocyclic or heterocyclic aromatic ring systems fused to each corresponding adjacent imidazole in the structure, wherein each of Ar 1 and Ar 2 are substituted with one or more fluorine atoms, X is an optional organic or inorganic substituent group at any available position on the core nucleus, n is zero or an integer from 1 to 8, and m is zero or an integer from 1 to 4.
2. The process of claim 1 wherein the compound is deposited on the substrate by sublimation or by solution-phase deposition and wherein the substrate has a temperature of no more than 150° C. during deposition.
3. The process of claim 1 comprising, not necessarily in order, the following steps:
(a) providing a support;
(b) providing a gate electrode material over the substrate;
(c) providing a gate dielectric over the gate electrode material;
(d) depositing the thin film of organic semiconductor material over the gate dielectric; and
(e) providing a source electrode and a drain electrode contiguous to the thin film of organic semiconductor material.
4. The process of claim 1 wherein the support is flexible carried out in its entirety below a peak temperature of 100° C. to produce an integrated circuit comprising a plurality of thin film transistors.
5. The process of claim 1 wherein the thin film is deposited using sublimation.
6. The process of claim 1 wherein the thin film is deposited out of a solvent solution.
7. The process of claim 1 wherein the substrate has a temperature during deposition of from 25° C. to 70° C.
8. The process of claim 1 wherein the thin film is deposited by ink jet printing.
9. The process of claim 1 wherein the thin film is deposited by vapor phase deposition.
10. The process of claim 1 wherein the thin film semiconductor device is further provided with first and second contact means in spaced apart contact with the thin film and third contact means spaced apart from the organic semiconductor material.
11. The process of claim 1 wherein the Ar 1 and Ar 2 moieties are single rings or fused aromatic polycyclic ring systems, including carbocyclic, heterocyclic, or hybrid ring systems in which a carbocylic ring is fused to a carbocyclic ring.
12. The process of claim 1 wherein X is independently selected from alkyl groups, alkenyl groups, alkoxy groups, halogens, cyano, substituted or unsubstituted aryl and arylalkyl groups.
13. The process of claim 1 wherein X is independently cyano or fluorine or any combinations thereof.
14. The process of claim 1 wherein the Ar 1 and Ar 2 moieties each independently comprise two or more fluorines substituted on each of the Ar 1 and Ar 2 moieties.
15. The process of claim 1 wherein the Ar 1 and Ar 2 moieties each independently comprise a benzene, naphthalene, thiophene, quinoline or pyridine ring system each substituted with one or more fluorines.
16. The process of claim 1 wherein the organic semiconducting material is capable of exhibiting electron mobility greater than 0.05 cm 2 /Vs.
17. The process of claim 1 further comprising incorporating the thin film semiconductor device into an electronic device selected from the group consisting of integrated circuits, active-matrix display, and solar cells.
18. The process of claim 17 comprising incorporating a multiplicity of thin film semiconductor devices into the electronic device.