Semiconductor device

1. A semiconductor device comprising:

a latch circuit including a first data holding node and a second data holding node;

a first capacitance element;

a first switch element that couples the first data holding node to the first capacitance element;

a second switch element that couples a data input terminal to one of the first data holding node and the second data holding node; and

a clock generation circuit configured to control the first switch element and the second switch element,

wherein the first capacitance element is coupled to the data input terminal through at least one of the first data holding node and the second data holding node,

wherein the clock generation circuit generates a first clock for controlling the first switch element and generates a second clock for controlling the second switch element, and the first clock and the second clock have the same frequency,

wherein the clock generation circuit turns off the first switch element in at least part of a time period during which the second switch element is in an ON state, and the clock generation circuit turns on the first switch element in at least part of a time period during which the second switch element is in an OFF state,

wherein, in the time period during which the second switch element is in the ON state, a second electrical path between the data input terminal and the one of the first data holding node and the second data holding node is made conductive and data of the data input terminal is written into the one of the first data holding node and the second data holding node, and

wherein, in a time period during which the first switch element is in the OFF state, a first electrical path between the capacitance element and the first data holding node is made non-conductive and no data is written into the capacitance element.

2. The semiconductor device according to claim 1 , wherein

the latch circuit comprises a loop circuit which includes a plurality of inverters.

3. The semiconductor device according to claim 1 ,

wherein the first switch element is constituted by a MOS field-effect transistor, and

wherein a storing electrode which is not connected to the first data holding node among storing electrodes of the first capacitance element is connected to a gate electrode of the MOS field-effect transistor.

4. The semiconductor device according to claim 1 ,

wherein a storing electrode which is not connected to the first data holding node among storing electrodes of the first capacitance element is connected to the second data holding node different from the first data holding node among the plurality of data holding nodes via a third switch element.

5. The semiconductor device according to claim 1 , further comprising:

a second capacitance element connected to the second data holding node different from the first data holding node; and

a second switch element provided between the second data holding node and the second capacitance element.

6. The semiconductor device according to claim 5 , further comprising:

a third switch element provided between the first capacitance element and the second capacitance element.

7. The semiconductor device according to claim 6 ,

wherein the third switch element is turned on in at least part of a time period during which the first switch element and the second switch element are in an OFF state.

8. The semiconductor device according to claim 1 ,

wherein the first switch element is turned off when the second switch element is in an ON state and is turned on when the second switch element is in an OFF state.

9. The semiconductor device according to claim 1 ,

wherein the second switch element couples the data input terminal to the first date holding node.

10. The semiconductor device according to claim 1 , wherein

in the time period during which the second element is in the OFF state, the second electrical path is made non-conductive and no data is written into the one of the first data holding node and the second data holding node.

11. The semiconductor device according to claim 1 , wherein

in a time period during which the first element is in an ON state, the first electrical path is made conductive and data of the first data holding node is written into the capacitance element.