IP Library Granted Patent US 8,357,981
Granted Patent B2
US 8,357,981 · App. 12/789,685 · Granted Jan 22, 2013

Transducer devices having different frequencies based on layer thicknesses and method of fabricating the same

Inventors: David Martin (Fort Collins, CO); John Choy (Westminster, CO)
Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
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Quick Facts
Patent No.
US 8,357,981
App. No.
12/789,685
Granted
Jan 22, 2013
Kind
B2
Abstract

A transducer array on a common substrate includes a membrane and first and second transducer devices. The membrane is formed on the common substrate, and includes a lower layer and an upper layer. The first transducer device includes a first resonator stack formed on at least the lower layer in a first portion of the membrane, the upper layer having a first thickness in the first portion of the membrane. The second transducer device includes a second resonator stack formed on at least the lower layer in a second portion of the membrane, the upper layer having a second thickness in the second portion of the membrane, where the second thickness is different from the first thickness, such that a first resonant frequency of the first transducer device is different from a second resonant frequency of the second transducer device.

Claims (11)

1. A transducer array on a common substrate, the transducer array comprising:

a membrane formed on the common substrate, the membrane comprising a lower layer and an upper layer;

a first transducer device comprising a first resonator stack formed on at least the lower layer in a first portion of the membrane, the upper layer having a first thickness in the first portion of the membrane; and

a second transducer device comprising a second resonator stack formed on at least the lower layer in a second portion of the membrane, the upper layer having a second thickness in the second portion of the membrane, the second thickness being different from the first thickness, such that a first resonant frequency of the first transducer device is different from a second resonant frequency of the second transducer device.

2. The transducer array of claim 1 , wherein the first resonator stack is formed between the lower layer and the upper layer in the first portion of the membrane, and the second resonator stack is formed between the lower layer and the upper layer in the second portion of the membrane.

3. The transducer array of claim 1 , wherein the first resonator stack is formed on both the lower layer and the upper layer in the first portion of the membrane, and the second resonator stack is formed on both the lower layer and the upper layer in the second portion of the membrane.

4. The transducer array of claim 1 , wherein the lower layer and the upper layer of the membrane are formed of the same material having different stresses.

5. The transducer array of claim 4 , wherein each of the lower layer and the upper layer comprises boron silicate glass (BSG).

6. The transducer array of claim 1 , wherein the lower layer and the upper layer of the membrane are formed of different materials having different stresses.

7. The transducer array of claim 1 , wherein the first resonator stack comprises a first piezoelectric layer formed between a first lower electrode and a first upper electrode, and the second resonator stack comprises a second piezoelectric layer formed between a second lower electrode and a second upper electrode.

8. The transducer array of claim 7 , wherein the lower layer comprises at least the first lower electrode and the second lower electrode.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE OF MERGER TO 09/05/2018 PREVIOUSLY RECORDED AT REEL: 047230 FRAME: 0133. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Oct 29, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047630/0456 →
MERGER Recorded Oct 4, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047230/0133 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
MERGER Recorded May 7, 2013
From: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 030369/0703 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 28, 2010
From: MARTIN, DAVID; CHOY, JOHN
To: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
Reel/Frame 024454/0855 →
Continuity (1)
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