FORMATION OF THERMOELECTRIC ELEMENTS BY NET SHAPE SINTERING

1 . A method for fabricating a plurality of stress-tolerant, fine-grain, semiconducting, thermoelectric elements to net shape, the thermoelectric elements exhibiting consistently high fracture strengths, the net shape elements being suitable for assembly as is into a thermoelectric device without further shaping or processing prejudicial to its fracture strength; the method comprising:

charging pre-measured quantities of semiconductor thermoelectric materials into a plurality of die cavities, the semiconductor material being in the form of powder particles, the powder particles having a mean size and a size distribution, and the die cavities being bounded by die surfaces, at least one of which die surfaces may be moved independently;

applying pressure to the semiconductor powder by suitably positioning the moveable die surfaces and thereby forming a plurality of powder compacts in the shape of the die cavities, each of the die cavities being bounded by three surfaces; a first, substantially planar surface bounded by a smooth closed curve; a second surface created by projection of the closed curve by a distance in a direction perpendicular to the plane of the first surface; and a third surface created by the projection of the first surface by the distance in the direction perpendicular to the plane of the first surface, the surfaces being arranged such that the first surface abuts the second surface and the third surface abuts the second surface; and

heating the plurality of powder compacts to form an at least partially densified solid of predetermined dimension.

2 . The method of claim 1 wherein the semiconductor thermoelectric material exhibits a cubic crystal structure.

3 . The method of claim 1 wherein the semiconductor thermoelectric material is a skutterudite compound comprising Sb and Co for n-type materials and Sb, Co, and Fe for p-type materials.

4 . The skutterudite compound of claim 3 further comprising one or more of the elements of the group consisting of Na, K, Ca, Sr, Ba, La, Ce, Pr, Nd, Eu, Yb, In, and Tl.

5 . The method of claim 1 wherein the semiconductor thermoelectric material powder has a mean particle size of 5 micrometers and an average flaw size on the order of, or smaller than the largest grain.

6 . The method of claim 1 wherein thermoelectric elements exhibit a fracture stress of greater than 100 MPa.

7 . The method of claim 1 wherein the smooth closed curve comprises at least a region of concave curvature.

8 . The method of claim 1 wherein the thermoelectric element comprises an assemblage of grains with an average grain size of less than 20 micrometers.

9 . The method of claim 1 wherein the measured quantities of powder are compacted and sintered by spark plasma sintering.

10 . A sintered, net shape, fine-grained, polycrystalline semiconducting thermoelectric element having an average grain size and a fracture stress; and comprising three surfaces; a first, substantially planar surface bounded by a smooth closed curve; a second surface created by projection of the closed curve by a distance in a direction perpendicular to the plane of the first surface; and a third surface created by the projection of the first surface by the distance in the direction perpendicular to the plane of the first surface, the surfaces being arranged such that the first surface abuts the second surface and the second surface abuts the third surface;

the continuous curve of the first and third surfaces being adapted to enable close packing of the elements.

11 . The thermoelectric element of claim 10 wherein the element is a skutterudite compound comprising Sb and Co for n-type materials and Sb, Co, and Fe for p-type materials.

12 . The skutterudite compound of claim 11 further comprising one or more of the elements of the group consisting of Na, K, Ca, Sr, Ba, La, Ce, Pr, Nd, Eu, Yb and Tl.

13 . The thermoelectric element of claim 10 wherein the average grain size is less than 5 micrometers.

14 . The thermoelectric element of claim 10 wherein the fracture stress is greater than 100 MPa.

15 . A thermoelectric device comprising two substantially parallel electrically-insulating plates spaced apart from one another and at least one n-type, fine-grained polycrystalline net shape powder processed semiconductor thermoelectric element and at least one p-type, fine-grained polycrystalline net shape powder processed semiconductor thermoelectric element interposed between them;

the n-type and p-type elements having two vertically-aligned, generally identical, planar surfaces in mechanical contact with each of the plates and a third surface corresponding to the vertical projection of the plate-contacting surfaces over a distance equal to the plate separation; the form of the third surface adapted to enable the n-type and p-type elements to closely abut one another without contact; and

the plates further comprising electrically-conducting features to enable selective connection of the n-type and p-type elements and to enable connection to an electric circuit external to the device.

16 . The thermoelectric device of claim 15 wherein the plate-contacting surfaces of the n-type and p-type elements are bounded by a smooth closed curve.

17 . A method of making a thermoelectric device, the device comprising a plurality of legs of a same first shape of a first thermoelectric material, a plurality of legs of a same second shape of a second thermoelectric material, each leg having opposing ends with an electrode fixed to each end, the legs and electrodes being arranged in electrical circuit paths for the intended operation of the device; the method comprising:

preparing a powder of micron-size grains, uniformly of the composition of at least one of the first and second thermoelectric materials;

compacting and sintering measured quantities of the powder into consolidated bodies that are the net shape of the legs of at least one of thermoelectric materials; and, without alteration of the net shapes of the legs,

connecting the legs with their respective electrodes.