Semiconductor device having a conductor buried in an opening
View Patent ↗A semiconductor device includes a first conductor formed over a semiconductor device; an insulation film formed over the semiconductor substrate and the first conductor and having an opening arriving at the first conductor; a first film formed in the opening and formed of a compound containing Zr; a second film formed over the first film in the opening and formed of an oxide containing Mn; and a second conductor buried in the opening and containing Cu.
1. A semiconductor device comprising:
a first conductor formed over a semiconductor substrate;
an insulation film formed over the semiconductor substrate and the first conductor and having an opening reaching to the first conductor;
a first film formed in the opening and formed of a compound containing Zr;
a second film formed over the first film in the opening and formed of an oxide containing Mn; and
a second conductor buried in the opening and containing Cu; wherein
the second film is formed between the first film and the second conductor,
the opening includes a contact hole reaching to the first conductor and a trench connected to a top of the contact hole,
the second film is formed on a side surface of the contact hole and on a side surface and a bottom surface of the trench,
the second conductor is in contact with the first conductor at a bottom of the contact hole.
2. The semiconductor device according to claim 1 , wherein
the first film is a ZrB 2 film, ZrBN film or ZrN film.
3. The semiconductor device according to claim 1 , where in
the first film is a layer film including a ZrB 2 film, ZrBN film or ZrN film.
4. A semiconductor device comprising:
a first conductor formed over a semiconductor substrate;
an insulation film formed over the semiconductor substrate and the first conductor and having an opening reaching to the first conductor;
a polycrystalline first film formed in the opening;
a second film formed over the first film in the opening and formed of an oxide containing Mn; and
a second conductor buried in the opening and containing Cu; wherein
the second film is formed between the first film and the second conductor,
the opening includes a contact hole reaching to the first conductor and a trench connected to a top of the contact hole,
the second film is formed on a side surface of the contact hole and on a side surface and a bottom surface of the trench,
the second conductor is in contact with the first conductor at a bottom of the contact hole.
5. The semiconductor device according to claim 4 , wherein
the first film is formed of a compound containing Zr.
6. The semiconductor device according to claim 4 , wherein
the first film is a ZrB 2 film.
7. The semiconductor device according to claim 1 , wherein
the first film contains no carbon.