Semiconductor device and manufacturing method thereof
View Patent ↗An insulation film ( 24 ) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor ( 23 ) is formed. Thereafter, an alumina film ( 25 ) is formed on the insulation film ( 24 ). According to the method, low coverage of the alumina film ( 25 ) does not become a problem, and the ferroelectric capacitor ( 23 ) is reliably protected.
1. A semiconductor device, comprising:
a semiconductor substrate;
a semiconductor element formed on the semiconductor substrate;
a pad formed above the semiconductor substrate and connected to the semiconductor element;
one wiring layer or two or more wiring layers formed between the semiconductor element and the pad;
a water permeation prevention film formed between the pad and an uppermost wiring layer located at an uppermost position of the one wiring layer or two or more wiring layers, and preventing permeation of water from the pad side to the uppermost wiring layer side; and
an alumina film that is away from the water permeation prevention film and covers a part of the wiring layer or the wiring layers.
2. The semiconductor device according to claim 1 , further comprising an insulation film formed to cover the uppermost wiring layer by a high density plasma CVD method.
3. The semiconductor device according to claim 1 , wherein the water permeation prevention film is one selected from a group consisting of an aluminum oxide film, a silicon nitride film and a silicon oxynitride film.
4. The semiconductor device according to claim 1 , wherein thickness of the water permeation prevention film is 10 nm to 100 nm.
5. The semiconductor device according to claim 1 , further comprising a ferroelectric capacitor formed at any layer between the semiconductor substrate and the uppermost wiring layer.