Granted Patent B2

US 8,457,479 · App. 12/923,591 · Granted Jun 4, 2013

Abstract

Claims (38)

1. A method of manufacture of a semiconductor device for performing a rapid thermal processing of a semiconductor substrate, comprising:

providing a rapid thermal processing apparatus which includes a processing chamber, a substrate support part arranged in the processing chamber and supporting the semiconductor substrate in contact with a rear surface of the semiconductor substrate, a lamp part optically irradiating a front surface of the semiconductor substrate and heating the semiconductor substrate, a thermo sensor provided to measure a temperature of the semiconductor substrate, a temperature computing part computing the temperature of the semiconductor substrate based on an output signal of the thermo sensor, and a control part controlling an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part;

performing, by the rapid thermal processing apparatus, the rapid thermal processing of the semiconductor substrate; and

correcting a control parameter of the irradiation intensity of the lamp part based on a reflectivity of the front surface of the semiconductor substrate which is measured beforehand,

wherein the correcting step comprises correcting the control parameter of the irradiation intensity of the lamp cart based on a correlation function indicating a relationship between the reflectivity of the front surface of the semiconductor substrate and a difference in a maximum temperature of the semiconductor substrate and the substrate support part.

2. A method of manufacture of a semiconductor device for performing a rapid thermal processing of a semiconductor substrate, comprising:

providing a rapid thermal processing apparatus which includes a processing chamber, a substrate support part arranged in the processing chamber and supporting the semiconductor substrate in contact with a back surface of the semiconductor substrate, a substrate lamp part optically irradiating a front surface of the semiconductor substrate and heating the semiconductor substrate, a support-part lamp part optically irradiating and heating the substrate support part, a reflector plate arranged on the back surface side of the semiconductor substrate and reflecting a radiation light from the substrate back surface, a plurality of radiation light sensors arranged on the side of the back surface of the semiconductor substrate and receiving a radiation light from the substrate back surface subjected to multiple reflection between the substrate back surface and the reflector plate, an emissivity sensor receiving directly a radiation light from the substrate back surface, an emissivity computing part computing an emissivity of the back surface of the semiconductor substrate based on output signals of the plurality of radiation light sensors and an output signal of the emissivity sensor, a support-part radiation light sensor receiving directly a radiation light from the substrate support part, a temperature computing part computing a temperature of the semiconductor substrate based on the output signals of the plurality of radiation light sensors and an output signal of the emissivity computing part, and computing a temperature of the substrate support part based on an output signal of the support-part radiation light sensor, and a control part controlling an irradiation intensity of each of the substrate lamp part and the support-part lamp part according to a temperature computed by the temperature computing part;

performing, by the rapid apparatus, the rapid thermal processing of the semiconductor substrate so that the control part controls the irradiation intensity of the substrate lamp part according to a temperature of the semiconductor substrate computed by the temperature computing part and controls the irradiation intensity of the support-part lamp part according to a temperature of the substrate support part computed by the temperature computing part; and

correcting both a control parameter of the irradiation intensity of the substrate lamp part and a control parameter of the support-part lamp part, respectively, based on a reflectivity of the front surface of the semiconductor substrate which is measured beforehand,

wherein the correcting step comprises correcting the control parameter of the irradiation intensity of the substrate lamp part based on the measured reflectivity of the front surface of the semiconductor substrate.

3. The method of manufacture of the semiconductor device according to claim 2 , comprising

measuring the reflectivity of the front surface of the substrate beforehand within the processing chamber in a state before the substrate is heated in the processing chamber to reach a desired target temperature, and

correcting the control parameter of the irradiation intensity based on the measured reflectivity.

4. The method of manufacture of the semiconductor device according to claim 2 , comprising

measuring the reflectivity of the front surface of the substrate beforehand as being a value of the irradiation intensity of the lamp part needed to retain the substrate at a first temperature lower than a desired target temperature for a fixed time in a state where the substrate is heated in the processing chamber for the fixed time at the 1st temperature, and

correcting the control parameter of the irradiation intensity based on the value of the irradiation intensity.

5. The method of manufacture of the semiconductor device according to claim 2 , comprising

correcting the control parameter of the irradiation intensity based on a correlation between the reflectivity of the substrate front surface which is measured beforehand and a difference in a maximum temperature of the substrate and the substrate support part.

6. The method of manufacture of the semiconductor device according to claim 2 , comprising

correcting a balance of the irradiation intensity of the substrate lamp part and the irradiation intensity of the support-part lamp part based on a correlation between the reflectivity of the front surface of the substrate which is measured beforehand and a balance of the irradiation intensity of the substrate lamp part and the irradiation intensity of the support-part lamp part when a difference in the temperature between the substrate and the substrate support part is minimum.

7. The method of manufacture of the semiconductor device according to claim 2 , comprising

measuring the reflectivity of the front surface of the substrate beforehand outside the processing chamber.

8. A method of rapid thermal processing of a semiconductor substrate, comprising:

providing a rapid thermal processing apparatus which includes a processing chamber, a substrate support part arranged in the processing chamber and supporting the semiconductor substrate in contact with a back surface of the semiconductor substrate, a lamp part optically irradiating a front surface of the semiconductor substrate and heating the semiconductor substrate, a thermo sensor arranged on the back surface side of the semiconductor substrate and receiving a radiation light from the semiconductor substrate, a temperature computing part computing a temperature of the semiconductor substrate based on an output signal of the thermo sensor, and a control part:

performing an intermittent irradiation of the lamp part by turning on the lamp part intermittently;

acquiring a first substrate temperature computed based on an output signal of the thermo sensor when the lamp part is turned on;

acquiring a second substrate temperature computed based on an output signal of the thermo sensor when the lamp part is turned off;

controlling an irradiation intensity of the lamp part according to the second substrate temperature when a difference between the first substrate temperature and the second substrate temperature is larger than a predetermined threshold; and

correcting a control parameter of the irradiation intensity of the lamp part based on a reflective of the front surface of the semiconductor substrate which is measured beforehand,

wherein the correcting step comprises correcting the control parameter of the irradiation intensity of the lamp part based on a correlation function indicating a relationship between the reflectivity of the front surface of the semiconductor substrate and a difference in a maximum temperature of the substrate and the semiconductor substrate support part.

9. The method according to claim 8 wherein, comprising

repeating the intermittent irradiation step, the first substrate temperature acquiring step, and the second substrate temperature acquiring step until the difference between the first substrate temperature and the second substrate temperature is less than the predetermined threshold.

10. The method according to claim 8 further comprising the steps of:

terminating the intermittent irradiation of the lamp part if the difference between the first substrate temperature and the second substrate temperature is less than the predetermined threshold; and

starting a continuous irradiation of the lamp part in which the control part controls the irradiation intensity of the lamp part according to the first substrate temperature computed based on the radiation light received by the thermo sensor when the lamp part is turned on.

11. The rapid thermal processing method according to claim 8 , comprising

providing that the lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate, and the thermo sensor comprises a plurality of thermo sensors arranged corresponding to the plurality of heating lamps respectively.

12. The rapid thermal processing method according to claim 11 wherein the controlling step comprises controlling such that an irradiation intensity of each of the plurality of heating lamps is controlled respectively.

Assignments (6)