IP Library Granted Patent US 8,580,100
Granted Patent B2
US 8,580,100 · App. 12/932,372 · Granted Nov 12, 2013

Metal deposition using seed layers

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Quick Facts
Patent No.
US 8,580,100
App. No.
12/932,372
Granted
Nov 12, 2013
Kind
B2
Abstract

Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

Claims (24)

1. A method of forming a conductive metal contact on a substrate, comprising:

selectively applying a seed layer on a portion of the surface, wherein this step comprises:

applying a layer of polymeric particles in an array pattern on the substrate to cover a portion of the surface;

depositing a mask layer onto the polymeric particles and substrate surface;

removing the layer of polymeric particles thereby exposing the portion of the surface of the substrate according to the array pattern;

applying a seed layer of nanoparticles onto the remaining portions of the mask layer and the exposed regions of the substrate surface; and

removing the mask layer by dissolving the mask layer with an acidic solution, thereby removing a portion of the seed layer adherent to the mask layer but preserving another portion of the seed layer applied to the substrate according to the array pattern; and

preferentially depositing an electrically conducting metal onto the selectively applied seed layer by electroplating whereby the nanoparticles serve as nucleation sites for metal deposition.

2. The method of claim 1 , wherein the method further comprises:

applying the nanoparticles as a complex with an immobilizing carrier; and

annealing the complex to apply the nanoparticles onto the surface of the substrate.

3. The method of claim 2 , wherein the annealing step further comprises sintering the nanoparticles onto the surface of the substrate.

4. The method of claim 2 , wherein the depositing step further comprises applying a complex of polymer encased nanoparticles.

5. The method of claim 4 , wherein the complex comprises at least one polymer selected from the group of poly(vinylpyrrolidone) (PVP), poly(acrylamide) (PAM), poly(vinyl alcohol) (PVAL), poly(acrylic acid) (PAA), and poly(ethyleneimine) (PEI).

6. The method of claim 4 , wherein the nanoparticles comprise metal nanoparticles.

7. The method of claim 6 , wherein the metal nanoparticles comprise at least one metal selected from the group of platinum, gold, palladium, ruthenium, silver, or nickel.

8. The method of claim 1 , wherein the method further comprises contacting the substrate with a surfactant prior to depositing the seed layer.

9. The method of claim 8 , wherein the surfactant further comprises at least one cationic surfactant.

10. The method of claim 1 , wherein the substrate is characterized by at least one of low surface energy, poor wettability, a hydrophobic surface, a glass material, low surface roughness.

11. The method of claim 1 , wherein the step of preferentially depositing the electrically conducting metal further comprises selecting a voltage at which electrically conduction material is preferentially deposited on the selectively applied seed layer.

12. The method of claim 1 , wherein the polymeric particles are self-assembled polystyrene microspheres.

13. The method of claim 1 , wherein the mask layer is a layer of copper.

14. The method of claim 1 , wherein the step of applying a seed layer of nanoparticles further comprises applying the nanoparticles as a complex with an immobilizing carrier and annealing the complex to apply the nanoparticles onto the surface of the substrate.

15. The method of claim 1 , wherein the step of applying polymeric particles further comprises etching the self-assembled polymer clusters to a predetermined diameter.

Assignments (7)
NOTICE OF TRANSFER Recorded May 20, 2015
From: SILICON VALLEY BANK
To: EVIDENT TECHNOLOGIES, INC.
Reel/Frame 035743/0291 →
SECURITY AGREEMENT Recorded May 4, 2015
From: GMZ ENERGY, INC.
To: SILICON VALLEY BANK
Reel/Frame 035571/0425 →
SECURITY INTEREST Recorded Mar 17, 2014
From: GMZ ENERGY, INC.
To: SILICON VALLEY BANK
Reel/Frame 032455/0879 →
CONFIRMATORY LICENSE Recorded Oct 26, 2012
From: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 029236/0466 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 10, 2011
From: FENG, HSIEN-PING; CHEN, GANG; CHEN, SHUO
To: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Reel/Frame 026424/0160 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 10, 2011
From: POUDEL, BED
To: GMZ ENERGY, INC.
Reel/Frame 026425/0086 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 10, 2011
From: BO, YU; REN, ZHIFENG
To: THE TRUSTEES OF BOSTON COLLEGE
Reel/Frame 026425/0382 →