Semiconductor device and method for manufacturing same
View Patent ↗A semiconductor device includes: a trench formed on an interlayer insulating film on a semiconductor substrate; a first barrier metal film formed to cover the bottom and sidewalls of the trench, the first barrier metal film being comprised of an electric conductor containing a platinum-group element, a refractory metal, and nitrogen; and a metal film formed on the first barrier metal film in the trench. The amount of nitrogen decreases in the thickness direction of the first barrier metal film toward the metal film.
1. A semiconductor device, comprising:
a trench formed in an interlayer insulating film formed on a semiconductor substrate;
a first barrier metal film formed to cover a bottom and sidewalls of the trench, the first barrier metal film being comprised of an electric conductor containing a platinum-group element, a refractory metal, and nitrogen; and
a metal film formed on the first barrier metal film in the trench, wherein:
an amount of nitrogen decreases in a thickness direction of the first barrier metal film toward the metal film, and
the refractory metal is in a state of a solid solution in the platinum-group element.
2. The semiconductor device of claim 1 , wherein
the first barrier metal film is of a single-layer structure.
3. The semiconductor device of claim 1 , further comprising:
a second barrier metal film formed between the first barrier metal film and the metal film, the second barrier metal film being comprised of an electric conductor containing a platinum- group element and a refractory metal.
4. The semiconductor device of claim 1 , wherein
a concentration of the refractory metal contained in the first barrier metal film is equal to or more than a solid solubility limit of the refractory metal in the platinum-group element.
5. The semiconductor device of claim 1 , wherein
the platinum-group element is at least one selected from the group consisting of ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), and platinum (Pt).
6. The semiconductor device of claim 1 , wherein
the refractory metal is at least one selected from the group consisting of tantalum (Ta), titanium (Ti), tungsten (W), and vanadium (V).
7. The semiconductor device of claim 1 , wherein
the first barrier metal film contains a nitride of the refractory metal.
8. The semiconductor device of claim 1 , wherein the first barrier metal film has an amorphous structure.
9. The semiconductor device of claim 1 , wherein the platinum-group element, the refractory metal, and the nitrogen of the first barrier metal form a single layer film.
10. A method for manufacturing a semiconductor device, the method comprising steps of:
(a) forming a trench on an interlayer insulating film on a semiconductor substrate;
(b) forming a first barrier metal film to cover a bottom and sidewalls of the trench, the first barrier metal film being comprised of an electric conductor containing a platinum-group element, a refractory metal, and nitrogen;
(c) depositing copper or a copper alloy to cover the first barrier metal film;
(d) filling the trench with a copper film after the step (c); and
(e) removing portions of the first barrier metal film and the copper film protruding from the trench to form an interconnect after the step (d), wherein:
in the step (b), the first barrier metal film is formed so that an amount of nitrogen decreases in a direction toward the center of the trench, and
the refractory metal is in a state of a solid solution in the platinum-group element.
11. The method of claim 10 , further comprising the step of:
(f) forming a second barrier metal film to cover the first barrier metal film, the second barrier metal film being comprised of an electric conductor containing a platinum-group element and a refractory metal, after the step (b) and before the step (c),
wherein
in the step (c), copper or a copper alloy is deposited to cover the second barrier metal film, and
in the step (e), a portion of the second barrier metal film protruding from the trench is also removed.
12. The method of claim 10 , wherein
in the step (b), the first barrier metal film is formed to have a single-layer structure.
13. The method of claim 10 , wherein
a concentration of the refractory metal contained in the first barrier metal film is equal to or more than a solid solubility limit of the refractory metal in the platinum-group element.
14. The method of claim 10 , wherein
the platinum-group element is at least one selected from the group consisting of ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), and platinum (Pt).
15. The method of claim 10 , wherein
the refractory metal is at least one selected from the group consisting of tantalum (Ta), titanium (Ti), tungsten (W), and vanadium (V).
16. The method of claim 10 , wherein in the step (b), the first barrier metal film has an amorphous structure.
17. The method of claim 10 , wherein the platinum-group element, the refractory metal, and the nitrogen of the first barrier metal form a single layer film.