Semiconductor device including capacitor of interconnection
View Patent ↗The semiconductor device includes a capacitor including a plurality of interconnection layers stacked over each other, the plurality of interconnection layers each including a plurality of electrode patterns extended in a first direction, a plurality of via parts provided between the plurality of interconnection layers and electrically interconnecting the plurality of the electrode patterns between the interconnection layers adjacent to each other, and an insulating films formed between the plurality of interconnection layers and the plurality of via parts. Each of the plurality of via parts is laid out, offset from a center of the electrode pattern in a second direction intersecting the first direction, and the plurality of electrode patterns has a larger line width at parts where the via parts are connected to, and a distance between the electrode patterns and the adjacent electrode patterns is reduced at the parts.
1. A semiconductor device comprising:
a capacitor including:
a plurality of interconnection layers stacked over each other, the plurality of interconnection layers each including a plurality of electrode patterns extended in a first direction;
a plurality of via parts provided between the plurality of interconnection layers and electrically interconnecting the plurality of the electrode patterns between the interconnection layers adjacent to each other; and
an insulating films formed between the plurality of interconnection layers and the plurality of via parts, wherein
each of the plurality of via parts is laid out, offset from a center of the electrode pattern in a second direction intersecting the first direction,
the plurality of electrode patterns has a larger line width at parts where the via parts are connected to, an increase of a line width of the electrode patterns at the parts where the via parts are connected to corresponds to an offset amount of the via part with respect to the center of the electrode pattern, and a distance between the electrode patterns and the adjacent electrode patterns is reduced at the parts.
2. A semiconductor device comprising:
a capacitor including:
a first interconnection layer including a first electrode pattern and a second electrode pattern extended in a first direction;
a second interconnection layer including a third electrode pattern formed above the first electrode pattern and extended in the first direction and a fourth electrode pattern formed above the second electrode pattern and extended in the first direction;
a first via part formed between the first electrode pattern and the third electrode pattern, and electrically interconnecting the first electrode pattern and the third electrode pattern;
a second via part formed between the second electrode pattern and the fourth electrode pattern, and electrically interconnecting the second electrode pattern and the fourth electrode pattern;
an insulating film formed between the first interconnection layer, the second interconnection layer, the first via part and the second via part, wherein
the first via part is laid out, offset from a center of the first electrode pattern in a second direction intersecting the first direction, and
the third electrode pattern has a line width increased at a part where the first via part is connected to, an increase of a line width of the third electrode pattern at the part where the first via part is connected to corresponds to an offset amount of the first via part with respect to the center of the first electrode pattern, and a distance with respect to the fourth electrode pattern is reduced at the part.
3. The semiconductor device according to claim 2 , comprising:
a plurality of the first via part, wherein
at least one of the plurality of the first via part is laid out, offset from the center of the first electrode pattern in the second direction; and
at least another one of the plurality of the first via part is laid out, offset from the center of the first electrode pattern in a third direction opposite to the second direction.
4. The semiconductor device according to claim 2 , wherein
the first interconnection layer further includes a first interconnection pattern,
the second interconnection layer further includes a second interconnection pattern electrically connected to the first interconnection pattern via a third via part, and
the third via part is laid out, not intentionally offset from the first interconnection pattern.
5. The semiconductor device according to claim 2 , wherein
the first interconnection layer further includes a first interconnection pattern,
the second interconnection layer further includes a second interconnection pattern electrically connected to the first interconnection pattern via a third via part, and
the offset amount of the first via part with respect to the center of the first electrode pattern is larger than an offset amount of the third via part with respect to the center of the first interconnection pattern.
6. The semiconductor device according to claim 2 , wherein
the second interconnection layer, the first via part and the second via part are integrally formed of the same conductive layer.
7. The semiconductor device according to claim 2 , wherein
the second via part is laid out, offset from a center of the second electrode pattern in the second direction.
8. The semiconductor device according to claim 7 , comprising:
a plurality of the second via part, wherein
at least one of the plurality of the second via part is laid out, offset from the center of the second electrode pattern in the second direction; and
at least another one of the plurality of the second via part is laid out, offset from the center of the second electrode pattern in a third direction opposite to the second direction.
9. The semiconductor device according to claim 2 , wherein
the first via part and the second via part arranged in a direction parallel to the second direction are laid out, offset from the first electrode pattern and the second electrode pattern in the same direction.