Semiconductor device

1. A semiconductor device comprising:

an electrode pad formed above a semiconductor substrate, and being a connecting portion for an external electrical connection;

a plurality of insulating films stacked between the semiconductor substrate and the connecting portion;

a protective film formed on the plurality of insulating films, and having an opening;

a multilayer body including a plurality of first interconnect layers formed in the plurality of insulating films and including an upper interconnect connected to the electrode pad in the opening of the protective film, and a via configured to connect the first interconnect layers;

a ring body formed in the plurality of insulating films to surround the multilayer body without interposing space, and including a plurality of second interconnect layers and at least one line via linearly connecting the second interconnect layers; and

a lead line electrically connecting the connecting portion to an internal circuit, wherein

the upper interconnect has a larger width than the opening of the protective film,

the multilayer body is electrically connected to the ring body,

the lead line is connected to the ring body, and

one of the plurality of first interconnect layers is directly connected to one of the plurality of the second interconnect layers.

2. The semiconductor device of claim 1 , wherein the lead line is a power supply line, and is connected to an upper interconnect of the plurality of second interconnect layers.

3. The semiconductor device of claim 1 , wherein the plurality of first interconnect layers include an interconnect arranged in a form extending in a direction toward the internal circuit.

4. The semiconductor device of claim 3 , wherein the one of the plurality of first interconnect layers connected to the ring body is an interconnect being the third layer under the connecting portion.

5. The semiconductor device of claim 1 , wherein the plurality of first interconnect layers include an interconnect arranged in a form extending in a direction parallel to an end surface of the semiconductor substrate closest to the electrode pad.

6. The semiconductor device of claim 1 , wherein the plurality of first interconnect layers includes

a first interconnect arranged in a form extending in a direction toward the internal circuit, and

a second interconnect arranged in a form extending in a direction parallel to an end surface of the semiconductor substrate closest to the electrode pad, and

the second interconnect is provided lower than the first interconnect.

7. The semiconductor device of claim 1 , wherein an upper interconnect of the plurality of second interconnect layers has a larger width than a lower interconnect of the plurality of second interconnect layers.

8. The semiconductor device of claim 1 , wherein an outer peripheral surface of an upper interconnect of the plurality of second interconnect layers is located outside an outer peripheral surface of a lower interconnect.

9. The semiconductor device of claim 1 , wherein

the at least one line via includes an upper line via and a lower line via, and

the upper line via has a larger width than the lower line via.

10. The semiconductor device of claim 1 , wherein

the at least one line via includes an upper line via and a plurality of lower line vias, and

the plurality of lower line vias are formed along each other.

11. The semiconductor device of claim 1 , wherein a plurality of lower interconnects of the plurality of second interconnect layers are formed along each other.

12. The semiconductor device of claim 1 , wherein

the plurality of insulating films have different dielectric constants, and

an upper insulating film has a higher dielectric constant than a lower insulating film.

13. The semiconductor device of claim 1 , wherein part of the plurality of insulating films is formed between the lead line and the upper interconnect connected to the electrode pad.

14. The semiconductor device of claim 1 , wherein one of the plurality of second interconnect layers, which is formed in a same layer as the lead line, is formed without interposing space.

15. The semiconductor device of claim 1 , wherein the upper interconnect connected to the electrode pad is continuously surrounded by one of the plurality of second interconnect layers formed in a same layer as the upper interconnect.

16. The semiconductor device of claim 15 , wherein the upper interconnect connected to the electrode pad, and the interconnect of the plurality of second interconnect layers formed in the same layer as the upper interconnect are separated by part of the plurality of insulating films.