Light emitting device, light emitting device package, and lighting system
Provided is a light emitting device according to one embodiment including: a substrate which has protrusions on the C-face, and of which unit cells are constructed in a hexagonal structure; a semiconductor layer which is formed on the substrate, in which empty spaces are formed in sides of the protrusions, and of which unit cells are constructed in a hexagonal structure; and a light emitting structure layer comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and second conductive semiconductor layer which are formed on the semiconductor layer, wherein the A-face of the substrate and the A-face of the semiconductor layer form an angle of greater than zero degree, and the protrusions include the R-faces.
1. A light emitting device including:
a substrate that has protrusions on a C-face, and of which unit cells are constructed in a hexagonal structure, wherein the substrate has flat surfaces between the protrusions;
a semiconductor layer that is formed on the substrate, in which empty spaces are formed in sides of the protrusions, and of which unit cells are constructed in a hexagonal structure; and
a light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer that are formed on the semiconductor layer, wherein an A-face of the substrate and an A-face of the semiconductor layer form an angle of greater than zero degree, and the protrusions include the R-faces, and
wherein the empty spaces are disposed in a boundary region between the protrusion and the flat surface.
2. The light emitting device according to claim 1 , wherein the protrusions are formed in a hemispherical shape.
3. The light emitting device according to claim 1 , wherein the empty spaces are formed in plural portions on the sides of the protrusions.
4. The light emitting device according to claim 3 , wherein the empty spaces are formed in six portions on the sides of the protrusions.
5. The light emitting device according to claim 1 , wherein the empty spaces are formed in portions where M-faces of the protrusions encounter with one another.
6. The light emitting device according to claim 1 , wherein the semiconductor layer is an undoped GaN layer.
7. The light emitting device according to claim 1 , wherein the empty spaces are surrounded by the sides of the protrusions and the semiconductor layer.
8. The light emitting device according to claim 1 , wherein the A-face of the substrate is parallel to the M-face of the semiconductor layer.
9. The light emitting device according to claim 1 , wherein the substrate is a sapphire substrate.
10. The light emitting device according to claim 1 , wherein the A-face of the substrate and the A-face of the semiconductor layer form an angle of 30 degrees.
11. A light emitting device package including:
a package body;
a first electrode and a second electrode electrically separated from each other on the package body;
a light emitting device electrically connected to the first electrode and the second electrode on the package body; and
a molding member surrounding the light emitting device on the package body, wherein the light emitting device includes:
a substrate which that has protrusions on a C-face, and of which unit cells are constructed in a hexagonal structure, wherein the substrate has flat surfaces between the protrusions;
a semiconductor layer that is formed on the substrate, in which empty spaces are formed in sides of the protrusions, and of which unit cells are constructed in a hexagonal structure; and
a light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer that are formed on the semiconductor layer, wherein an A-face of the substrate and an A-face of the semiconductor layer form an angle of greater than zero degree, and the protrusions include the R-faces, and
wherein the empty spaces are disposed in a boundary region between the protrusion and the flat surface.
12. The light emitting device package according to claim 11 , wherein the protrusions are formed in a hemispherical shape.
13. The light emitting device package according to claim 11 , wherein the empty spaces are formed in plural portions on the sides of the protrusions.
14. The light emitting device package according to claim 13 , wherein the empty spaces are formed in six portions on the sides of the protrusions.
15. The light emitting device package according to claim 11 , wherein the empty spaces are formed in portions where M-faces of the protrusions encounter with one another.
16. The light emitting device package according to claim 11 , wherein the semiconductor layer is an undoped GaN layer.
17. The light emitting device package according to claim 11 , wherein the empty spaces are surrounded by the sides of the protrusions and the semiconductor layer.
18. The light emitting device package according to claim 11 , wherein the A-face of the substrate is parallel to an M-face of the semiconductor layer.
19. The light emitting device package according to claim 11 , wherein the substrate is a sapphire substrate.
20. A lighting system using light emitting devices as a light source, the lighting system including a light emitting module comprising one or more light emitting devices, wherein the light emitting device includes:
a substrate that has protrusions on a C-face, and of which unit cells are constructed in a hexagonal structure, wherein the substrate has flat surfaces between the protrusions;
a semiconductor layer that is formed on the substrate, in which empty spaces are formed in sides of the protrusions, and of which unit cells are constructed in a hexagonal structure; and
a light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer that are formed on the semiconductor layer, wherein an A-face of the substrate and an A-face of the semiconductor layer form an angle of greater than zero degree, and the protrusions include the R-faces, and
wherein the empty spaces are disposed in a boundary region between the protrusion and the flat surface.