Method for manufacturing semiconductor device
View Patent ↗A ferroelectric capacitor is formed over a semiconductor substrate ( 10 ), and thereafter, interlayer insulating films ( 48, 50, 52 ) covering the ferroelectric capacitor are formed. Next, a contact hole ( 54 ) reaching a top electrode ( 40 ) is formed in the interlayer insulating films ( 48, 50, 52 ). Next, a wiring ( 58 ) electrically connected to the top electrode ( 40 ) through the contact hole ( 54 ) is formed on the interlayer insulating films ( 48, 50, 52 ). At the time of forming the top electrode ( 40 ), conductive oxide films ( 40 a, 40 b ) are formed, and then a cap film ( 40 c ) composed of a noble metal exhibiting less catalytic action than Pt and having a thickness of 150 nm or less is formed on the conductive oxide films ( 40 a, 40 b ).
1. A method for manufacturing a semiconductor device, comprising:
forming a ferroelectric capacitor including a bottom electrode, a ferroelectric film and a top electrode, over a semiconductor substrate;
forming an interlayer insulating film covering the ferroelectric capacitor; forming a contact hole reaching the top electrode in the interlayer insulating film; and
forming a wiring electrically connected to the top electrode through the contact hole on the interlayer insulating film,
wherein forming the top electrode comprises:
forming a first conductive oxide film having a first composition ratio of oxygen;
forming a second conductive oxide film on the first conductive oxide film, a second composition ratio of oxygen of the second conductive oxide film being higher than the first composition ratio of oxygen; and
forming a cap film composed of a noble metal having less catalytic action than Pt (platinum) and having a thickness of 150 nm or less on the second conductive oxide film.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein as the cap film, one kind of film selected from a group consisting of an iridium film, a ruthenium film, a rhodium film and a palladium film is formed.
3. The method for manufacturing a semiconductor device according to claim 1 , further comprising forming a conductive plug containing tungsten in the contact hole.
4. The method for manufacturing a semiconductor device according to claim 3 , wherein forming the conductive plug comprises forming a glue film containing titanium or tantalum along an inner surface of the contact hole.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein a thickness of the cap film is made 75 nm or less.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein a thickness of the cap film is made 5 nm or more.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein a thickness of the cap film is made 15 nm or more.
8. The method for manufacturing a semiconductor device according to claim 1 , wherein the wiring is formed in a plurality of wiring layers, the method, further comprising forming a barrier film preventing diffusion of hydrogen or water in a position at a height of one or more of the wiring layers.
9. The method for manufacturing a semiconductor device according to claim 2 , wherein on an occasion of forming the cap film, a temperature of the semiconductor substrate is set at 400° C. to 500° C.
10. The method for manufacturing a semiconductor device according to claim 1 , wherein forming the ferroelectric capacitor comprises, after the first conductive oxide film is formed and before the second conductive oxide film is formed, performing annealing treatment of the first conductive oxide film and the ferroelectric film in an atmosphere containing oxygen.