SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes a first capacitive insulating film, a semiconductor region, a gate insulating film, and a gate electrode. The semiconductor region has a groove. The gate insulating film covers a surface of the groove. The gate electrode is in the groove. The gate electrode includes first and second conductive films. The first conductive film is in contact with the gate insulating film. The first conductive film has an upper surface which is higher than a close portion of the second conductive film. The close portion is closer to the upper surface of the first conductive film.
1 . A semiconductor device comprising:
a semiconductor region having a groove;
a gate insulating film covering a surface of the groove; and
a gate electrode in the groove, the gate electrode comprising first and second conductive films, the first conductive film being in contact with the gate insulating film, the first conductive film having an upper surface which is higher than a close portion of the second conductive film, the close portion being closer to the upper surface of the first conductive film.
2 . The semiconductor device according to claim 1 , wherein the first conductive film is interposed between the gate insulating film and the second conductive film.
3 . The semiconductor device according to claim 2 , further comprising:
an insulating film in the groove, the insulating film covering the second conductive film.
4 . The semiconductor device according to claim 3 , wherein the upper surface of the first conductive film has a substantially uniform level.
5 . The semiconductor device according to claim 4 , wherein a top of the second conductive film is lower than the upper surface of the first conductive film.
6 . The semiconductor device according to claim 5 , wherein an upper surface of the insulating film is substantially the same in level as the upper surface of the first conductive film.
7 . The semiconductor device according to claim 1 , wherein the second conductive film is lower in resistivity than the first conductive film.
8 . The semiconductor device according to claim 1 , wherein the first conductive film comprises first and second portions,
wherein the first and second portions are positioned at opposite sides of the first conductive film,
wherein a first upper surface of the first portion is substantially the same in level as a second upper surface of the second portion.
9 . The semiconductor device according to claim 1 , wherein the second conductive film is greater in horizontal dimension than the first conductive film.
10 . The semiconductor device according to claim 1 , wherein an upper surface of the second conductive film is non-flat.
11 . The semiconductor device according to claim 10 , wherein the second conductive film has crystal grains and grain boundaries.
12 . The semiconductor device according to claim 1 , further comprising:
a first impurity diffusion layer in the semiconductor region, the first impurity diffusion layer being adjacent to the groove, the first impurity diffusion layer having a top portion and a bottom portion, the upper surface of the first conductive film being higher than the bottom portion and lower than the top portion.
13 . The semiconductor device according to claim 1 , further comprising:
a third conductive film between the first and second conductive films.
14 . A semiconductor device comprising:
a semiconductor region having a groove;
a gate insulating film covering a surface of the groove;
a gate electrode in the groove, the gate electrode comprising first and second conductive films, the first conductive film being in contact with the gate insulating film, the first conductive film comprising an upper portion, the upper portion having an upper side surface; and
an insulating film covering the second conductive film, the insulating film having a first side surface which faces to the upper side surface.
15 . The semiconductor device according to claim 14 , wherein an upper surface of the insulating film is substantially the same in level as an upper surface of the first conductive film.
16 . The semiconductor device according to claim 14 , wherein an upper surface of the second conductive film is non-flat.
17 . The semiconductor device according to claim 14 , wherein the second conductive film is greater in horizontal dimension than the first conductive film.
18 . A semiconductor device comprising:
a semiconductor region having a semiconductor side surface; and
a gate electrode comprising first and second conductive films, the first conductive film extending along the semiconductor side surface, the second conductive film being disposed near the first conductive film, a top of the first conductive film being higher than a top of the second conductive film.
19 . The semiconductor device according to claim 18 , further comprising:
an insulating film in the groove, the insulating film covering the second conductive film.
20 . The semiconductor device according to claim 19 , wherein an upper surface of the insulating film is substantially the same in level as an upper surface of the first conductive film.